@article{FoersterLachenmannKastalskyetal.1998, author = {F{\"o}rster, Arnold and Lachenmann, S. G. and Kastalsky, A. and Uhlisch, D.}, title = {Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; F{\"o}rster A.; Uhlisch, D.; Neurohr, K.; Sch{\"a}pers, Th.}, series = {Journal of Applied Physics. 83 (1998), H. 12}, journal = {Journal of Applied Physics. 83 (1998), H. 12}, isbn = {1089-7550}, pages = {8077 -- 8079}, year = {1998}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterMikulicsMarsoetal.2001, author = {F{\"o}rster, Arnold and Mikulics, M. and Marso, M. and Adam, R.}, title = {Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; F{\"o}rster, A.; Kordos, P.; Xu, Y.; Sobolewski, R.}, series = {2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society}, journal = {2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {078037049X}, pages = {155 -- 155}, year = {2001}, language = {en} } @article{KrafftFoersterHartetal.2001, author = {Krafft, B. and F{\"o}rster, Arnold and Hart, A. van der and Sch{\"a}pers, T.}, title = {Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing}, series = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4}, journal = {Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4}, isbn = {1386-9477}, pages = {635 -- 641}, year = {2001}, language = {en} } @article{VitusevichFoersterLuethetal.2001, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V. and Konakova, R. V. and Sheka, D. I.}, title = {Resonant spectroscopy of electric-field-induced superlattices}, series = {Journal of Applied Physics. 90 (2001), H. 6}, journal = {Journal of Applied Physics. 90 (2001), H. 6}, isbn = {1089-7550}, doi = {10.1063/1.1392956}, pages = {2857 -- 2861}, year = {2001}, language = {en} } @article{StockMalindretosIndlekoferetal.2001, author = {Stock, J. and Malindretos, J. and Indlekofer, K.M. and P{\"o}ttgens, Michael and F{\"o}rster, Arnold and L{\"u}th, Hans}, title = {A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits}, series = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, journal = {IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6}, isbn = {0018-9383}, pages = {1028 -- 1032}, year = {2001}, language = {en} } @article{HodelOrzatiMarsoetal.2000, author = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver}, series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, journal = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6320-5}, pages = {466 -- 469}, year = {2000}, language = {en} } @article{HoskensRoerTolstikhinetal.2000, author = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold}, title = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation}, series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, journal = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5947-X}, pages = {444 -- 445}, year = {2000}, language = {en} } @article{HoskensTolstikhinFoersteretal.2000, author = {Hoskens, R. C. P. and Tolstikhin, V.I. and F{\"o}rster, Arnold and Roer, T.G. van de}, title = {Vertically integrated transistor-laser structure, take 2}, series = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, journal = {WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.}, publisher = {Univ. of Michigan}, address = {Ann Arbor, Mich.}, isbn = {0970311109}, pages = {Getr. Z{\"a}hlung [ca. 200 S.]}, year = {2000}, language = {en} } @article{FoersterStockIndlekofer2002, author = {F{\"o}rster, Arnold and Stock, J. and Indlekofer, K. M.}, title = {Perspectives of resonant tunneling diodes}, series = {Recent research developments in materials science \& engineering/ 1,2}, journal = {Recent research developments in materials science \& engineering/ 1,2}, publisher = {Transworld Research Network}, address = {Trivandrum, India}, isbn = {81-7895-057-X}, pages = {527 -- 556}, year = {2002}, language = {en} }