@article{HodelOrzatiMarsoetal.2000, author = {Hodel, U. and Orzati, A. and Marso, M. and Homann, O. and Fox, A. and Hart, A. v. d. and F{\"o}rster, Arnold and Kordos, P. and L{\"u}th, H.}, title = {A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver}, series = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, journal = {Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6320-5}, pages = {466 -- 469}, year = {2000}, language = {en} } @article{SchmidtTonnesmannFoersteretal.2000, author = {Schmidt, R. and Tonnesmann, A. and F{\"o}rster, Arnold and Grimm, M. and Kordos, P. and L{\"u}th, H.}, title = {Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer}, series = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society}, journal = {8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-6550-X}, pages = {95 -- 98}, year = {2000}, language = {en} } @article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} }