@article{BragardConradvanHoeketal.2011,
  author    = {Bragard, Michael and Conrad, M. and van Hoek, H. and De Doncker, R. W.},
  title     = {The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off},
  series = {IEEE transactions on industry applications},
  volume    = {47},
  journal   = {IEEE transactions on industry applications},
  number    = {5},
  publisher = {IEEE},
  address   = {New York},
  issn      = {0093-9994},
  doi       = {10.1109/TIA.2011.2161432},
  pages     = {2175 -- 2182},
  year      = {2011},
  language  = {en}
}
@phdthesis{Bragard2012,
  author    = {Bragard, Michael},
  title     = {The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beitr{\"a}ge des ISEA ; 62)},
  publisher = {Shaker},
  address   = {Aachen},
  isbn      = {978-3-8440-1152-4},
  pages     = {III, 164 S. : Ill., graph. Darst.},
  year      = {2012},
  abstract  = {This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.},
  language  = {en}
}
@misc{BragardHueningKowalewski2023,
  author    = {Bragard, Michael and H{\"u}ning, Felix and Kowalewski, Paul},
  title     = {Vorrichtung zur Relativlagenbestimmung [Offenlegungschrift]},
  year      = {2023},
  abstract  = {Die Erfindung betrifft eine Vorrichtung zur Bestimmung einer Relativlage zwischen einem feststehenden Teil und einem zu demselben in eine Bewegungsrichtung bewegbaren beweglichen Teil, wobei der feststehende Teil mit einem Wiegandsensor versehen ist, wobei der Wiegandsensor zwischen zwei gegenpolig zueinander ausgebildeten Permanentmagneten angeordnet ist und dass der bewegliche Teil eine Mehrzahl von beabstandet zueinander angeordneten Magnetisierungsstegen aus einem magnetisch leitenden Material aufweist, die in der Bewegungsrichtung zumindest eine gleich große Erstreckung aufweisen wie der Permanentmagnet, dass ein Abstand zwischen benachbarten Magnetisierungsstegen derart gew{\"a}hlt ist, dass in einer ersten Relativlage ein erster Permanentmagnet von einem der Magnetisierungsstege {\"u}berdeckt ist und ein zweiter Permanentmagnet nicht von einem der Magnetisierungsstege {\"u}berdeckt ist.},
  language  = {de}
}