@article{FoersterSchmidtHaug1997,
  author    = {F{\"o}rster, Arnold and Schmidt, T. and Haug, R. J.},
  title     = {Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. F{\"o}rster ...},
  series = {Physical review letters. 78 (1997), H. 8},
  journal   = {Physical review letters. 78 (1997), H. 8},
  isbn      = {0031-9007},
  pages     = {1540 -- 1543},
  year      = {1997},
  language  = {en}
}
@article{FoersterRosenauerRemmele1997,
  author    = {F{\"o}rster, Arnold and Rosenauer, A. and Remmele, T.},
  title     = {Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images / A. Rosenauer ; T. Remmele ; D. Gerthsen ... A. F{\"o}rster},
  series = {Optik : international journal for light and electron optics. 105 (1997), H. 3},
  journal   = {Optik : international journal for light and electron optics. 105 (1997), H. 3},
  isbn      = {0030-4026},
  pages     = {99 -- 107},
  year      = {1997},
  language  = {en}
}
@article{FoersterLachenmannKastalsky1997,
  author    = {F{\"o}rster, Arnold and Lachenmann, S. G. and Kastalsky, A.},
  title     = {Properties of Nb/InAs/Nb hybrid step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. F{\"o}rster ...},
  series = {Journal of low temperature physics. 106 (1997), H. 3-4},
  journal   = {Journal of low temperature physics. 106 (1997), H. 3-4},
  isbn      = {0022-2291},
  pages     = {321 -- 326},
  year      = {1997},
  language  = {en}
}
@article{Foerster1994,
  author    = {F{\"o}rster, Arnold},
  title     = {Resonant tunneling diodes : the effect of structural properties on their performance},
  series = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)},
  journal   = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)},
  isbn      = {0065-3357},
  pages     = {37 -- 62},
  year      = {1994},
  language  = {en}
}
@article{FoersterDoehlerHeber1998,
  author    = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.},
  title     = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...},
  series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  journal   = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)},
  publisher = {Clarendon Press},
  address   = {Oxford},
  isbn      = {0-19-850058-0},
  pages     = {478 -- 504},
  year      = {1998},
  language  = {en}
}
@article{MaezawaFoerster2003,
  author    = {Maezawa, Koichi and F{\"o}rster, Arnold},
  title     = {Quantum transport devices based on resonant tunneling},
  series = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).},
  journal   = {Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  isbn      = {3-527-40363-9},
  pages     = {407 -- 424},
  year      = {2003},
  language  = {en}
}
@article{MikulicsCamaraHardtetal.2004,
  author    = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.},
  title     = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs},
  series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  journal   = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald},
  publisher = {IEEE Operations Center},
  address   = {Piscataway, NJ},
  isbn      = {0-7803-8335-7},
  pages     = {231 -- 234},
  year      = {2004},
  language  = {en}
}
@article{ZatkoDubeckyBohaceketal.2004,
  author    = {Zatko, B. and Dubeck{\´y}, F. and Bohacek, P. and Gombia, E. and Frigeri, P. and Mosca, R. and Franchi, S. and Huarn, J. and Nescas, V. and Sekacova, M. and F{\"o}rster, Arnold and Kordos, P.},
  title     = {On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs},
  series = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2},
  journal   = {Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2},
  isbn      = {0168-9002},
  pages     = {111 -- 120},
  year      = {2004},
  language  = {en}
}
@article{SrnanekGeurtsLentzeetal.2004,
  author    = {Srnanek, R. and Geurts, J. and Lentze, M. and Irmer, G. and Donoval, D. and Brdecka, P. and Kordos, P. and F{\"o}rster, Arnold and Sciana, B. and Radziewicz, D. and Tlaczala, M.},
  title     = {Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples},
  series = {Applied surface science . 230 (2004), H. 1 -4},
  journal   = {Applied surface science . 230 (2004), H. 1 -4},
  isbn      = {0169-4332},
  pages     = {379 -- 385},
  year      = {2004},
  language  = {en}
}
@article{MikulicsAdamKordosetal.2005,
  author    = {Mikulics, M. and Adam, R. and Kordos, P. and F{\"o}rster, Arnold and L{\"u}th, H. and Wu, S. and Zheng, X. and Sobolewski, R.},
  title     = {Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates},
  series = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8},
  journal   = {IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8},
  isbn      = {1041-1135},
  pages     = {1725 -- 1727},
  year      = {2005},
  language  = {en}
}
@article{FoersterLepsaFreundt2007,
  author    = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.},
  title     = {Hot electron injector Gunn diode for advanced driver assistance systems},
  series = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  journal   = {Applied physics A: materials science and processing. 87 (2007), H. 3},
  isbn      = {0947-8396},
  pages     = {545 -- 558},
  year      = {2007},
  language  = {en}
}
@article{BaeckerRaueSchusseretal.2012,
  author    = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef},
  title     = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films},
  series = {Physica Status Solidi (a)},
  volume    = {209},
  journal   = {Physica Status Solidi (a)},
  number    = {5},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1862-6319},
  doi       = {10.1002/pssa.201100763},
  pages     = {839 -- 845},
  year      = {2012},
  abstract  = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.},
  language  = {en}
}
@article{SabitovaEbertLenzetal.2013,
  author    = {Sabitova, A. and Ebert, Ph. and Lenz, A. and Schaafhausen, S. and Ivanova, L. and D{\"a}hne, M. and Hoffmann, A. and Dunin-Borkowski, R. E. and F{\"o}rster, Arnold and Grandidier, B. and Eisele, H.},
  title     = {Intrinsic bandgap of cleaved ZnO(112¯0) surfaces},
  series = {Applied physics letters},
  volume    = {Vol. 102},
  journal   = {Applied physics letters},
  issn      = {1077-3118 (E-Journal); 0003-6951 (Print)},
  pages     = {021608},
  year      = {2013},
  language  = {en}
}
@inproceedings{FoersterStockMontanarietal.2006,
  author    = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans},
  title     = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry},
  url       = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462},
  year      = {2006},
  abstract  = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.},
  subject      = {Biosensor},
  language  = {en}
}