@article{BaeckerRaueSchusseretal.2012, author = {B{\"a}cker, Matthias and Raue, Markus and Schusser, Sebastian and Jeitner, C. and Breuer, L. and Wagner, P. and Poghossian, Arshak and F{\"o}rster, Arnold and Mang, Thomas and Sch{\"o}ning, Michael Josef}, title = {Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films}, series = {Physica Status Solidi (a)}, volume = {209}, journal = {Physica Status Solidi (a)}, number = {5}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6319}, doi = {10.1002/pssa.201100763}, pages = {839 -- 845}, year = {2012}, abstract = {Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3-12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.}, language = {en} } @article{DarmoSchaefferFoersteretal.2000, author = {Darmo, J. and Sch{\"a}ffer, F. and F{\"o}rster, Arnold and Kordos, P.}, title = {Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range}, series = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, journal = {ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {0780359399}, pages = {147 -- 150}, year = {2000}, language = {en} } @article{Foerster1995, author = {F{\"o}rster, Arnold}, title = {Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7-x microstriplines on Si and GaAs substrates . R{\"u}ders, F; Hollricher, O.; Copetti, C. A. ; F{\"o}rster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H.}, series = {Journal of Applied Physics. 77 (1995), H. 10}, journal = {Journal of Applied Physics. 77 (1995), H. 10}, isbn = {1089-7550}, pages = {5282 -- 5286}, year = {1995}, language = {en} } @article{Foerster2003, author = {F{\"o}rster, Arnold}, title = {Layer Deposition I}, series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, journal = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, publisher = {Forschungszentrum, Zentralbibliothek}, address = {J{\"u}lich}, isbn = {3-89336-319-X}, pages = {C2.1 -- C2.13}, year = {2003}, language = {en} } @article{Foerster2000, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes operating as modern quantum transport devices}, series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, journal = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, publisher = {Allied Publ.}, address = {New Delhi [u.a.]}, isbn = {81-7023-998-2}, pages = {966 -- 966}, year = {2000}, language = {en} } @book{Foerster1988, author = {F{\"o}rster, Arnold}, title = {Anwendung der hochaufl{\"o}senden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage J{\"u}lich / Kernforschungsanlage ; 2247)}, publisher = {Zentralbibliothek der Kernforschungsanlage}, address = {J{\"u}lich}, pages = {104 S. : graph. Darst.}, year = {1988}, language = {de} } @article{Foerster1994, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes : the effect of structural properties on their performance}, series = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, journal = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, isbn = {0065-3357}, pages = {37 -- 62}, year = {1994}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{FoersterAppenzellerSchroer1996, author = {F{\"o}rster, Arnold and Appenzeller, J. and Schroer, C.}, title = {Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Sch{\"a}pers ... A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, isbn = {1095-3795}, pages = {9959 -- 9963}, year = {1996}, language = {en} } @article{FoersterBelyaevVitusevichetal.2002, author = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.}, title = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.}, series = {Nanotechnology. 13 (2002), H. 1}, journal = {Nanotechnology. 13 (2002), H. 1}, pages = {94 -- 96}, year = {2002}, language = {en} } @article{FoersterBertuccioPullia1997, author = {F{\"o}rster, Arnold and Bertuccio, G. and Pullia, A.}, title = {Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. F{\"o}rster ...}, series = {IEEE transactions on nuclear science. 44 (1997), H. 1}, journal = {IEEE transactions on nuclear science. 44 (1997), H. 1}, isbn = {0018-9499}, pages = {1 -- 5}, year = {1997}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterBetkoMorvicetal.1999, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; F{\"o}rster, A.; Kordos, P.}, series = {Journal of Applied Physics. 86 (1999), H. 11}, journal = {Journal of Applied Physics. 86 (1999), H. 11}, isbn = {1089-7550}, pages = {6243 -- 6248}, year = {1999}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterBruggerMeinersetal.1994, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U. and Diniz, R.}, title = {Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. F{\"o}rster ...}, series = {Solid state electronics. 37 (1994), H. 4-6}, journal = {Solid state electronics. 37 (1994), H. 4-6}, isbn = {0038-1101}, pages = {801 -- 804}, year = {1994}, language = {en} } @article{FoersterCambelKicinetal.2002, author = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.}, title = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.}, series = {Materials Science and Engineering: C. 19 (2002), H. 2}, journal = {Materials Science and Engineering: C. 19 (2002), H. 2}, isbn = {0928-4931}, pages = {161 -- 165}, year = {2002}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterDarmoDubeckyetal.1996, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster}, series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, journal = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, address = {Piscataway, NJ [u.a.]}, isbn = {0-7803-3095-1}, pages = {67 -- ff.}, year = {1996}, language = {en} } @article{FoersterDarmoDubeckyetal.1994, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {393 -- 396}, year = {1994}, language = {en} }