@article{FoersterDekorsyKim1996, author = {F{\"o}rster, Arnold and Dekorsy, T. and Kim, A. T. M.}, title = {Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. F{\"o}rster}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3}, isbn = {1095-3795}, pages = {1531 -- 1538}, year = {1996}, language = {en} } @article{FoersterDarmoSchaferetal.2002, author = {F{\"o}rster, Arnold and Darmo, J. and Schafer, F. and Kordos, P.}, title = {Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {87 -- 90}, year = {2002}, language = {en} } @article{FoersterDarmoDubeckyetal.1996, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. F{\"o}rster}, series = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, journal = {Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]}, address = {Piscataway, NJ [u.a.]}, isbn = {0-7803-3095-1}, pages = {67 -- ff.}, year = {1996}, language = {en} } @article{FoersterDarmoDubeckyetal.1994, author = {F{\"o}rster, Arnold and Darmo, J. and Dubeck{\´y}, F. and Kordos, P.}, title = {Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubeck{\´y} ; P. Kordos ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {393 -- 396}, year = {1994}, language = {en} } @article{FoersterDarmoDubeckyetal.1998, author = {F{\"o}rster, Arnold and Darmo, J. and Dubecky, F. and Kordos, P.}, title = {Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; F{\"o}rster, A.}, series = {Applied Physics Letters. 72 (1998), H. 5}, journal = {Applied Physics Letters. 72 (1998), H. 5}, isbn = {1077-3118}, pages = {590 -- 592}, year = {1998}, language = {en} } @article{FoersterCambelKicinetal.2002, author = {F{\"o}rster, Arnold and Cambel, V. and Kicin, S. and Kuliffayov{\´a}, M.}, title = {Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayov{\´a}, M.; Kov{\´a}cov{\´a}, E.; Nov{\´a}k, J.; Kostic, I.; F{\"o}rster, A.}, series = {Materials Science and Engineering: C. 19 (2002), H. 2}, journal = {Materials Science and Engineering: C. 19 (2002), H. 2}, isbn = {0928-4931}, pages = {161 -- 165}, year = {2002}, language = {en} } @article{FoersterBruggerMeinersetal.1994, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U. and Diniz, R.}, title = {Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. F{\"o}rster ...}, series = {Solid state electronics. 37 (1994), H. 4-6}, journal = {Solid state electronics. 37 (1994), H. 4-6}, isbn = {0038-1101}, pages = {801 -- 804}, year = {1994}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterBetkoMorvicetal.1999, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; F{\"o}rster, A.; Kordos, P.}, series = {Journal of Applied Physics. 86 (1999), H. 11}, journal = {Journal of Applied Physics. 86 (1999), H. 11}, isbn = {1089-7550}, pages = {6243 -- 6248}, year = {1999}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterBertuccioPullia1997, author = {F{\"o}rster, Arnold and Bertuccio, G. and Pullia, A.}, title = {Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. F{\"o}rster ...}, series = {IEEE transactions on nuclear science. 44 (1997), H. 1}, journal = {IEEE transactions on nuclear science. 44 (1997), H. 1}, isbn = {0018-9499}, pages = {1 -- 5}, year = {1997}, language = {en} } @article{FoersterBelyaevVitusevichetal.2002, author = {F{\"o}rster, Arnold and Belyaev, A. E. and Vitusevich, S.A. and Eaves, L.}, title = {Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; F{\"o}rster, A.; Reetz, W.; Danylyuk, S.V.}, series = {Nanotechnology. 13 (2002), H. 1}, journal = {Nanotechnology. 13 (2002), H. 1}, pages = {94 -- 96}, year = {2002}, language = {en} } @article{FoersterAppenzellerSchroer1996, author = {F{\"o}rster, Arnold and Appenzeller, J. and Schroer, C.}, title = {Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Sch{\"a}pers ... A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, isbn = {1095-3795}, pages = {9959 -- 9963}, year = {1996}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{Foerster2003, author = {F{\"o}rster, Arnold}, title = {Layer Deposition I}, series = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, journal = {Fundamentals of nanoelectronics / Stefan Bl{\"u}gel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums J{\"u}lich : Materie und Material ; 14 ; 34)}, publisher = {Forschungszentrum, Zentralbibliothek}, address = {J{\"u}lich}, isbn = {3-89336-319-X}, pages = {C2.1 -- C2.13}, year = {2003}, language = {en} } @article{Foerster1994, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes : the effect of structural properties on their performance}, series = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, journal = {Festk{\"o}rperprobleme = Advances in solid state physics. 33 (1994)}, isbn = {0065-3357}, pages = {37 -- 62}, year = {1994}, language = {en} } @article{Foerster2000, author = {F{\"o}rster, Arnold}, title = {Resonant tunneling diodes operating as modern quantum transport devices}, series = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, journal = {Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2}, publisher = {Allied Publ.}, address = {New Delhi [u.a.]}, isbn = {81-7023-998-2}, pages = {966 -- 966}, year = {2000}, language = {en} } @article{Foerster1995, author = {F{\"o}rster, Arnold}, title = {Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7-x microstriplines on Si and GaAs substrates . R{\"u}ders, F; Hollricher, O.; Copetti, C. A. ; F{\"o}rster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H.}, series = {Journal of Applied Physics. 77 (1995), H. 10}, journal = {Journal of Applied Physics. 77 (1995), H. 10}, isbn = {1089-7550}, pages = {5282 -- 5286}, year = {1995}, language = {en} } @misc{FrauenrathRenzRiegeretal.2010, author = {Frauenrath, Tobias and Renz, Wolfgang and Rieger, Jan and G{\"o}mmel, Andreas and Butenweg, Christoph and Niendorf, Thoralf}, title = {High Spatial Resolution 3D MRI of the Larynx Using a Dedicated TX/RX Phased Array Coil at 7.0T}, series = {2010 ISMRM-ESMRMB joint annual meeting}, journal = {2010 ISMRM-ESMRMB joint annual meeting}, issn = {1545-4428}, year = {2010}, abstract = {MRI holds great potential for elucidating laryngeal and vocal fold anatomy together with the assessment of physiological processes associated in human phonation. However, MRI of human phonation remains very challenging due to the small size of the targeted structures, interfering signal from fat, air between the vocal folds and surrounding muscles and physiological motion. These anatomical/physiological constraints translate into stringent technical requirements in balancing, scan time, image contrast, immunity to physiological motion, temporal resolution and spatial resolution. Motivated by these challenges and limitations this study is aiming at translating the sensitivity gain at ultra-high magnetic fields for enhanced high spatial resolution 3D imaging of the larynx and vocal tract. To approach this goal a dedicated two channel TX/RX larynx coil is being proposed.}, language = {en} }