@article{FoersterDoehlerHeber1998, author = {F{\"o}rster, Arnold and D{\"o}hler, G. H and Heber, J.}, title = {Hot electrons in n-i-p.i-based devices / G. H. D{\"o}hler ; J. Heber ... A. F{\"o}rster ...}, series = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, journal = {Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)}, publisher = {Clarendon Press}, address = {Oxford}, isbn = {0-19-850058-0}, pages = {478 -- 504}, year = {1998}, language = {en} } @article{FoersterLepsaFreundt2007, author = {F{\"o}rster, Arnold and Lepsa, M. I. and Freundt, D.}, title = {Hot electron injector Gunn diode for advanced driver assistance systems}, series = {Applied physics A: materials science and processing. 87 (2007), H. 3}, journal = {Applied physics A: materials science and processing. 87 (2007), H. 3}, isbn = {0947-8396}, pages = {545 -- 558}, year = {2007}, language = {en} } @article{HoskensRoerTolstikhinetal.2000, author = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold}, title = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation}, series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, journal = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5947-X}, pages = {444 -- 445}, year = {2000}, language = {en} } @article{FoersterMalindretosIndlekoferetal.2002, author = {F{\"o}rster, Arnold and Malindretos, J{\"o}rg and Indlekofer, Klaus Michael and Lepsa, Mihail Ion}, title = {Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, J{\"o}rg; F{\"o}rster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans}, series = {Superlattices and Microstructures. 31 (2002), H. 6}, journal = {Superlattices and Microstructures. 31 (2002), H. 6}, isbn = {0749-6036}, pages = {315 -- 325}, year = {2002}, language = {en} } @article{FoersterHuVerghese1996, author = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.}, title = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster}, series = {Semiconductor science and technology. 11 (1996), H. 12}, journal = {Semiconductor science and technology. 11 (1996), H. 12}, isbn = {1361-6641}, pages = {1888 -- 1894}, year = {1996}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterMontanariLepsaetal.2005, author = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th}, series = {Solid-state electronics. 49 (2005), H. 2}, journal = {Solid-state electronics. 49 (2005), H. 2}, isbn = {0038-1101}, pages = {245 -- 250}, year = {2005}, language = {en} } @article{FoersterOhlerDaniels1998, author = {F{\"o}rster, Arnold and Ohler, C. and Daniels, C.}, title = {Heterojunction band offsets and Schottky-barrier heights: Tersoff's theory in the presence of strain / C. Ohler ; C. Daniels ; A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12}, journal = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12}, isbn = {1095-3795}, pages = {7864 -- 7871}, year = {1998}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterKlemradtFunkeetal.1996, author = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M}, title = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster}, series = {Physica B: condensed matter. 221 (1996), H. 1-4}, journal = {Physica B: condensed matter. 221 (1996), H. 1-4}, isbn = {0921-4526}, pages = {27 -- 33}, year = {1996}, language = {en} } @article{FoersterTillmannGerthsen1995, author = {F{\"o}rster, Arnold and Tillmann, K. and Gerthsen, D.}, title = {Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Thin solid films. 261 (1995), H. 1-2}, journal = {Thin solid films. 261 (1995), H. 1-2}, isbn = {0040-6090}, pages = {139 -- 147}, year = {1995}, language = {en} } @article{FoersterLentzenGerthsen1992, author = {F{\"o}rster, Arnold and Lentzen, M. and Gerthsen, D.}, title = {Growth mode and strain relaxation during the initial stage of InxGa1-xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Applied physics letters. 60 (1992), H. 1}, journal = {Applied physics letters. 60 (1992), H. 1}, isbn = {0003-6951}, pages = {74 -- 76}, year = {1992}, language = {en} } @article{MikulicsCamaraHardtetal.2004, author = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.}, title = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs}, series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, journal = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8335-7}, pages = {231 -- 234}, year = {2004}, language = {en} } @article{FoersterMikulicsSiebeetal.2002, author = {F{\"o}rster, Arnold and Mikulics, M. and Siebe, F. and Fox, A.}, title = {Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {129 -- 132}, year = {2002}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode}, series = {Nanotechnology. 11 (2000), H. 4}, journal = {Nanotechnology. 11 (2000), H. 4}, isbn = {1361-6528}, pages = {305 -- 308}, year = {2000}, language = {en} } @article{FoersterKicinCambeletal.2002, author = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.}, title = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.}, series = {Journal of Applied Physics. 91 (2002), H. 2}, journal = {Journal of Applied Physics. 91 (2002), H. 2}, isbn = {1089-7550}, pages = {878 -- 880}, year = {2002}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{FoersterLayetLueth1989, author = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.}, title = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy}, series = {Applied Surface Science. 41 - 42 (1989)}, journal = {Applied Surface Science. 41 - 42 (1989)}, isbn = {0169-4332}, pages = {306 -- 311}, year = {1989}, language = {en} } @article{FoersterRizziLueth1989, author = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.}, title = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th}, series = {Surface Science. 211 - 212 (1989)}, journal = {Surface Science. 211 - 212 (1989)}, isbn = {0039-6028}, pages = {620 -- 629}, year = {1989}, language = {en} }