@article{FoersterRosePietschetal.1995, author = {F{\"o}rster, Arnold and Rose, D. and Pietsch, U. and Metzger, T. H.}, title = {Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; F{\"o}rster, A. ; Metzger, T. H.}, series = {Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4}, journal = {Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4}, isbn = {0168-583X}, pages = {333 -- 336}, year = {1995}, language = {en} } @article{FoersterTillmannThust1996, author = {F{\"o}rster, Arnold and Tillmann, K. and Thust, M.}, title = {Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. F{\"o}rster ...}, series = {Philosophical magazine / Letters. 74 (1996), H. 5}, journal = {Philosophical magazine / Letters. 74 (1996), H. 5}, isbn = {1362-3036}, pages = {309 -- 315}, year = {1996}, language = {en} } @article{FoersterHaukeJakumeitetal.1998, author = {F{\"o}rster, Arnold and Hauke, M. and Jakumeit, J. and Krafft, B.}, title = {DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; F{\"o}rster, A.; L{\"u}th, H.}, series = {Journal of Applied Physics. 84 (1998), H. 4}, journal = {Journal of Applied Physics. 84 (1998), H. 4}, isbn = {1089-7550}, pages = {2034 -- 2039}, year = {1998}, language = {en} } @article{FoersterLeutherLueth1996, author = {F{\"o}rster, Arnold and Leuther, A. and L{\"u}th, H.}, title = {DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. F{\"o}rster ; H. L{\"u}th ...}, series = {Semiconductor science and technology. 11 (1996), H. 5}, journal = {Semiconductor science and technology. 11 (1996), H. 5}, isbn = {1361-6641}, pages = {766 -- 771}, year = {1996}, language = {en} } @article{FoersterSchaepersKruegeretal.1995, author = {F{\"o}rster, Arnold and Sch{\"a}pers, T. and Kr{\"u}ger, M. and Appenzeller, J.}, title = {Effect of electron-electron interaction on hot ballistic electron beams / Th. Sch{\"a}pers ; M. Kr{\"u}ger ; J. Appenzeller ; A. F{\"o}rster ...}, series = {Applied physics letters. 66 (1995), H. 26}, journal = {Applied physics letters. 66 (1995), H. 26}, isbn = {0003-6951}, pages = {3603 -- 3606}, year = {1995}, language = {en} } @article{FoersterLangeGerthsen1993, author = {F{\"o}rster, Arnold and Lange, J. and Gerthsen, D.}, title = {Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes}, series = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4}, isbn = {1071-1023}, pages = {1743 -- 1747}, year = {1993}, language = {en} } @article{FoersterKordosBetko1995, author = {F{\"o}rster, Arnold and Kordos, P. and Betko, J.}, title = {Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. F{\"o}rster ...}, series = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, journal = {Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)}, publisher = {Institute of Physics}, address = {Bristol [u.a.]}, isbn = {0-7503-0226-7}, pages = {295 -- ff.}, year = {1995}, language = {en} } @article{FoersterBetkoKordosetal.1994, author = {F{\"o}rster, Arnold and Betko, J. and Kordos, P. and Kuklovsky, S.}, title = {Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. F{\"o}rster ...}, series = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, journal = {Materials science and engineering B: Solid\&\#150; state materials for advanced technology. 28 (1994), H. 1-3}, isbn = {0921-5107}, pages = {147 -- 150}, year = {1994}, language = {en} } @article{FoersterAppenzellerSchroer1996, author = {F{\"o}rster, Arnold and Appenzeller, J. and Schroer, C.}, title = {Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Sch{\"a}pers ... A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, journal = {Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15}, isbn = {1095-3795}, pages = {9959 -- 9963}, year = {1996}, language = {en} } @article{FoersterMuellerLengeleretal.1995, author = {F{\"o}rster, Arnold and M{\"u}ller, F. and Lengeler, B. and Sch{\"a}pers, T.}, title = {Electron-electron interaction in ballistic electron beams / F. M{\"u}ller ; B. Lengeler ; Th. Sch{\"a}pers ... A. F{\"o}rster...}, series = {Physical Review B . 51 (1995), H. 8}, journal = {Physical Review B . 51 (1995), H. 8}, isbn = {0163-1829}, pages = {5099 -- 5105}, year = {1995}, language = {en} } @article{FoersterLauterBauser1995, author = {F{\"o}rster, Arnold and Lauter, J. and Bauser, E.}, title = {Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. F{\"o}rster ...}, series = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3}, journal = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3}, isbn = {0920-5632}, pages = {381 -- 385}, year = {1995}, language = {en} } @article{FoersterRizziLueth1989, author = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.}, title = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th}, series = {Surface Science. 211 - 212 (1989)}, journal = {Surface Science. 211 - 212 (1989)}, isbn = {0039-6028}, pages = {620 -- 629}, year = {1989}, language = {en} } @article{FoersterLayetLueth1989, author = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.}, title = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy}, series = {Applied Surface Science. 41 - 42 (1989)}, journal = {Applied Surface Science. 41 - 42 (1989)}, isbn = {0169-4332}, pages = {306 -- 311}, year = {1989}, language = {en} } @inproceedings{FoersterStockMontanarietal.2006, author = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry}, url = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462}, year = {2006}, abstract = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.}, subject = {Biosensor}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{FoersterKicinCambeletal.2002, author = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.}, title = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.}, series = {Journal of Applied Physics. 91 (2002), H. 2}, journal = {Journal of Applied Physics. 91 (2002), H. 2}, isbn = {1089-7550}, pages = {878 -- 880}, year = {2002}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode}, series = {Nanotechnology. 11 (2000), H. 4}, journal = {Nanotechnology. 11 (2000), H. 4}, isbn = {1361-6528}, pages = {305 -- 308}, year = {2000}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{FoersterMikulicsSiebeetal.2002, author = {F{\"o}rster, Arnold and Mikulics, M. and Siebe, F. and Fox, A.}, title = {Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {129 -- 132}, year = {2002}, language = {en} } @article{MikulicsCamaraHardtetal.2004, author = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.}, title = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs}, series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, journal = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8335-7}, pages = {231 -- 234}, year = {2004}, language = {en} }