@article{FoersterLauterBauser1995, author = {F{\"o}rster, Arnold and Lauter, J. and Bauser, E.}, title = {Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. F{\"o}rster ...}, series = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3}, journal = {Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3}, isbn = {0920-5632}, pages = {381 -- 385}, year = {1995}, language = {en} } @article{FoersterRizziLueth1989, author = {F{\"o}rster, Arnold and Rizzi, Angela and L{\"u}th, H.}, title = {Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. F{\"o}rster ; H. L{\"u}th}, series = {Surface Science. 211 - 212 (1989)}, journal = {Surface Science. 211 - 212 (1989)}, isbn = {0039-6028}, pages = {620 -- 629}, year = {1989}, language = {en} } @article{FoersterLayetLueth1989, author = {F{\"o}rster, Arnold and Layet, J. M. and L{\"u}th, H.}, title = {Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy}, series = {Applied Surface Science. 41 - 42 (1989)}, journal = {Applied Surface Science. 41 - 42 (1989)}, isbn = {0169-4332}, pages = {306 -- 311}, year = {1989}, language = {en} } @inproceedings{FoersterStockMontanarietal.2006, author = {F{\"o}rster, Arnold and Stock, J{\"u}rgen and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry}, url = {http://nbn-resolving.de/urn:nbn:de:hbz:a96-opus-1462}, year = {2006}, abstract = {GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.}, subject = {Biosensor}, language = {en} } @article{FoersterAdamMikulicsetal.2002, author = {F{\"o}rster, Arnold and Adam, R. and Mikulics, M. and Schelten, J.}, title = {Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.}, series = {Applied Physics Letters. 81 (2002), H. 18}, journal = {Applied Physics Letters. 81 (2002), H. 18}, isbn = {1077-3118}, pages = {3485 -- 3487}, year = {2002}, language = {en} } @article{FoersterKicinCambeletal.2002, author = {F{\"o}rster, Arnold and Kicin, S and Cambel, V. and Kuliffayova, M.}, title = {Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.}, series = {Journal of Applied Physics. 91 (2002), H. 2}, journal = {Journal of Applied Physics. 91 (2002), H. 2}, isbn = {1089-7550}, pages = {878 -- 880}, year = {2002}, language = {en} } @article{VitusevichFoersterReetzetal.2000, author = {Vitusevich, S. A. and F{\"o}rster, Arnold and Reetz, W. and L{\"u}th, H. and Belyaev, A. E. and Danylyuk, S. V.}, title = {Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode}, series = {Nanotechnology. 11 (2000), H. 4}, journal = {Nanotechnology. 11 (2000), H. 4}, isbn = {1361-6528}, pages = {305 -- 308}, year = {2000}, language = {en} } @article{FoersterKohleickLueth1993, author = {F{\"o}rster, Arnold and Kohleick, R. and L{\"u}th, H.}, title = {Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. F{\"o}rster ; H. L{\"u}th}, series = {Physical Review B . 48 (1993), H. 20}, journal = {Physical Review B . 48 (1993), H. 20}, isbn = {0163-1829}, pages = {15138 -- 15143}, year = {1993}, language = {en} } @article{FoersterMikulicsSiebeetal.2002, author = {F{\"o}rster, Arnold and Mikulics, M. and Siebe, F. and Fox, A.}, title = {Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.}, series = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, journal = {Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7276-X}, pages = {129 -- 132}, year = {2002}, language = {en} } @article{MikulicsCamaraHardtetal.2004, author = {Mikulics, M. and Camara, I. and Hardt, A. van der and Fox, A. and F{\"o}rster, Arnold and Gusten, R. and L{\"u}th, H. and Kordos, P.}, title = {Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs}, series = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, journal = {Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8335-7}, pages = {231 -- 234}, year = {2004}, language = {en} } @article{FoersterLentzenGerthsen1992, author = {F{\"o}rster, Arnold and Lentzen, M. and Gerthsen, D.}, title = {Growth mode and strain relaxation during the initial stage of InxGa1-xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Applied physics letters. 60 (1992), H. 1}, journal = {Applied physics letters. 60 (1992), H. 1}, isbn = {0003-6951}, pages = {74 -- 76}, year = {1992}, language = {en} } @article{FoersterTillmannGerthsen1995, author = {F{\"o}rster, Arnold and Tillmann, K. and Gerthsen, D.}, title = {Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. F{\"o}rster ...}, series = {Thin solid films. 261 (1995), H. 1-2}, journal = {Thin solid films. 261 (1995), H. 1-2}, isbn = {0040-6090}, pages = {139 -- 147}, year = {1995}, language = {en} } @article{FoersterKlemradtFunkeetal.1996, author = {F{\"o}rster, Arnold and Klemradt, U. and Funke, M. and Fromm, M}, title = {Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A F{\"o}rster}, series = {Physica B: condensed matter. 221 (1996), H. 1-4}, journal = {Physica B: condensed matter. 221 (1996), H. 1-4}, isbn = {0921-4526}, pages = {27 -- 33}, year = {1996}, language = {en} } @article{FoersterBetkoMorvicetal.1996, author = {F{\"o}rster, Arnold and Betko, J. and Morvic, M. and Novak, J.}, title = {Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Nov{\´a}k ... A. F{\"o}rster ...}, series = {Applied physics letters. 69 (1996), H. 17}, journal = {Applied physics letters. 69 (1996), H. 17}, isbn = {0003-6951}, pages = {2563 -- 2565}, year = {1996}, language = {en} } @article{FoersterOhlerDaniels1998, author = {F{\"o}rster, Arnold and Ohler, C. and Daniels, C.}, title = {Heterojunction band offsets and Schottky-barrier heights: Tersoff's theory in the presence of strain / C. Ohler ; C. Daniels ; A. F{\"o}rster ...}, series = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12}, journal = {Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12}, isbn = {1095-3795}, pages = {7864 -- 7871}, year = {1998}, language = {en} } @article{FoersterMontanariLepsaetal.2005, author = {F{\"o}rster, Arnold and Montanari, Simone and Lepsa, Mihail Ion and L{\"u}th, Hans}, title = {High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold F{\"o}rster ; Mihail Ion Lepsa ; Hans L{\"u}th}, series = {Solid-state electronics. 49 (2005), H. 2}, journal = {Solid-state electronics. 49 (2005), H. 2}, isbn = {0038-1101}, pages = {245 -- 250}, year = {2005}, language = {en} } @article{FoersterBruggerMeiners1991, author = {F{\"o}rster, Arnold and Brugger, H. and Meiners, U.}, title = {High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. W{\"o}lk ... A. F{\"o}rster ...}, series = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, journal = {Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman}, publisher = {Inst. of Electrical and Electronics Engineers}, address = {Piscataway, NJ}, isbn = {0-7803-0491-8}, pages = {39 -- ff.}, year = {1991}, language = {en} } @article{FoersterHuVerghese1996, author = {F{\"o}rster, Arnold and Hu, Quing and Verghese, S.}, title = {High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. F{\"o}rster}, series = {Semiconductor science and technology. 11 (1996), H. 12}, journal = {Semiconductor science and technology. 11 (1996), H. 12}, isbn = {1361-6641}, pages = {1888 -- 1894}, year = {1996}, language = {en} } @article{FoersterMalindretosIndlekoferetal.2002, author = {F{\"o}rster, Arnold and Malindretos, J{\"o}rg and Indlekofer, Klaus Michael and Lepsa, Mihail Ion}, title = {Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, J{\"o}rg; F{\"o}rster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans}, series = {Superlattices and Microstructures. 31 (2002), H. 6}, journal = {Superlattices and Microstructures. 31 (2002), H. 6}, isbn = {0749-6036}, pages = {315 -- 325}, year = {2002}, language = {en} } @article{HoskensRoerTolstikhinetal.2000, author = {Hoskens, R.C.P. and Roer, T.G. van de and Tolstikhin, V.I. and F{\"o}rster, Arnold}, title = {Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation}, series = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, journal = {LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5947-X}, pages = {444 -- 445}, year = {2000}, language = {en} }