TY - JOUR A1 - Hüning, Felix T1 - Die Anforderungen steigen : Entwicklungstrends bei MOSFETs für den Automobilbereich JF - Elektronik-Industrie. 39 (2008), H. 5 Y1 - 2008 SN - 0174-5522 SP - 74 EP - 76 PB - - ER - TY - JOUR A1 - Hüning, Felix T1 - Robusti affidabili per le Sfide dell’automotive JF - Selezione di Elettronica (2008) Y1 - 2008 SP - 116 EP - 117 PB - - ER - TY - JOUR A1 - Hüning, Felix T1 - Mosfet ottimizzati per l’automotive JF - Selezione di Elettronica (2009) Y1 - 2009 SP - 115 EP - 117 PB - - ER - TY - JOUR A1 - Hüning, Felix T1 - Entwicklungstrends bei MOSFETs für den Automobilbereich JF - Elektronik-Industrie . 39 (2008), H. 5 Y1 - 2008 SN - 0174-5522 SP - 74 EP - 76 PB - - ER - TY - JOUR A1 - Hüning, Felix T1 - SMD packages for PowerMOSFETs in automotive applications – developments and trends JF - Automotive Designline Europe (2009) Y1 - 2009 PB - - ER - TY - JOUR A1 - Hüning, Felix T1 - Using Trench PowerMOSFETs in Linear Mode JF - Power Electronics Europe (2012) N2 - If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list. Yet there are multiple uses for Trench Power MOSFETs in linear mode. In fact, even turning the device on and off in switching applications is a form of linear operation. Also, these components can be run in linear mode to protect the device against voltage surges. This article will illustrate the factors that need to be considered for linear operation and show how Trench Power MOSFETs are suited to it. Y1 - 2012 SN - 1748-3530 SP - 27 EP - 29 PB - DFA Media CY - Tonbridge ER - TY - JOUR A1 - Hüning, Felix T1 - PowerMOSFETs in ANL2-Technologie : Ansteuerungen bis in den kW-Bereich mit wenig Verlustleistung und Platzbedarf JF - Elektronik-Industrie Y1 - 2011 SN - 0174-5522 VL - 42 IS - 10 SP - 36 EP - 39 PB - Hüthig CY - Heidelberg ER - TY - JOUR A1 - Hüning, Felix T1 - Nachrüstmöglichkeiten von Dieselfahrzeugen aus technischer Sicht JF - Zeitschrift für Verkehrsrecht : NZV Y1 - 2019 IS - 1 SP - 27 EP - 32 PB - C.H.Beck ER - TY - JOUR A1 - Hulsebosch, R. J. A1 - Günther, C. A1 - Horn, C. A1 - Holtmanns, S. A1 - Howker, K. A1 - Paterson, K. A1 - Claessens, J. A1 - Schuba, Marko ED - Mitchell, Chris J. T1 - Pioneering Advanced Mobile Privacy and Security JF - Security for mobility Y1 - 2004 SN - 9781849190886 U6 - https://doi.org/10.1049/PBTE051E_ch N1 - IEE telecommunications series ; 51 SP - 383 EP - 432 PB - Institution of Electrical Engineers CY - London ER - TY - JOUR A1 - Holtrup, S. A1 - Sadeghfam, Arash A1 - Heuermann, Holger A1 - Awakowicz, P. T1 - Characterization and optimization technique for microwave-driven high-intensity discharge lamps using hot S-parameters JF - IEEE transactions on microwave theories and techniques N2 - High-intensity discharge lamps can be driven by radio-frequency signals in the ISM frequency band at 2.45 GHz, using a matching network to transform the impedance of the plasma to the source impedance. To achieve an optimal operating condition, a good characterization of the lamp in terms of radio frequency equivalent circuits under operating conditions is necessary, enabling the design of an efficient matching network. This paper presents the characterization technique for such lamps and presents the design of the required matching network. For the characterization, a high-intensity discharge lamp was driven by a monofrequent large signal at 2.45 GHz, whereas a frequency sweep over 300 MHz was performed across this signal to measure so-called small-signal hot S-parameters using a vector network analyzer. These parameters are then used as an equivalent load in a circuit simulator to design an appropriate matching network. Using the measured data as a black-box model in the simulation results in a quick and efficient method to simulate and design efficient matching networks in spite of the complex plasma behavior. Furthermore, photometric analysis of high-intensity discharge lamps are carried out, comparing microwave operation to conventional operation. Y1 - 2014 U6 - https://doi.org/10.1109/TMTT.2014.2342652 SN - 0018-9480 VL - 62 IS - 10 SP - 2471 EP - 2480 PB - IEEE CY - New York ER -