TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Journal of  Physics D: Applied  Physics. 32 (1999), H. 14
Y1  - 1999
SN  - 1361-6463
SP  - 1729
EP  - 1733
ER  - 
TY  - JOUR
A1  - Stock, J.
A1  - Malindretos, J.
A1  - Indlekofer, K.M.
A1  - Pöttgens, Michael
A1  - Förster, Arnold
A1  - Lüth, Hans
T1  - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
JF  - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6
Y1  - 2001
SN  - 0018-9383
SP  - 1028
EP  - 1032
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Physica B: Condensed Matter. 314 (2002), H. 1-4
Y1  - 2002
SN  - 0921-4526
SP  - 499
EP  - 502
ER  -