TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
A1  - Uhlisch, D.
T1  - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A.
JF  - Applied Superconductivity. 6 (1999), H. 10-12
Y1  - 1999
SN  - 0964-1807
SP  - 681
EP  - 688
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Indlekofer, K. M.
T1  - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
JF  - Microelectronic Engineering. 46 (1999), H. 1-4
Y1  - 1999
SN  - 0167-9317
N1  - International Conference on Micro- and Nanofabrication
SP  - 169
EP  - 172
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, B. A.
T1  - Intrinsic bistability effect in delta doped tunneling diodes /  S. A. Vitusevich ; A. Förster ; B. A.  Belyaev ...
JF  - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz
Y1  - 1999
N1  - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5
CY  - Warsaw
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Gersdorf, P.
A1  - Fox, A.
T1  - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-&#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
JF  - IEEE Photonics Technology Letters. 11 (1999), H. 1
Y1  - 1999
SN  - 1041-1135
SP  - 117
EP  - 119
ER  - 
TY  - JOUR
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Litvinov, D.
A1  - Gerthsen, D.
A1  - Förster, Arnold
A1  - Schmidt, R.
T1  - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF  - Physical Review B. 61 (2000), H. 12
Y1  - 2000
SN  - 1095-3795
SP  - 8276
EP  - 8288
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, Hans
A1  - Schäpers, Thomas
T1  - Die neue Welt
JF  - Spektrum der Wissenschaft (1999)
Y1  - 1999
SN  - 0170-2971
SP  - 90
EP  - 93
ER  - 
TY  - JOUR
A1  - Hoskens, R. C. P.
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
A1  - Roer, T.G. van de
T1  - Vertically integrated transistor-laser structure, take 2
JF  - WOCSDICE  2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1  - 2000
SN  - 0970311109
N1  - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB  - Univ. of Michigan
CY  - Ann Arbor, Mich.
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Journal of  Physics D: Applied  Physics. 32 (1999), H. 14
Y1  - 1999
SN  - 1361-6463
SP  - 1729
EP  - 1733
ER  -