TY  - JOUR
A1  - Förster, Arnold
A1  - Spitzer, A.
A1  - Lüth, H.
T1  - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
JF  - Surface Science. 172 (1986), H. 1
Y1  - 1986
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 174
EP  - 182
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Stock, J.
A1  - Indlekofer, K. M.
T1  - Perspectives of resonant tunneling diodes
JF  - Recent research developments in materials science & engineering/ 1,2
Y1  - 2002
SN  - 81-7895-057-X
N1  - Nebent.: Materials science & engineering
SP  - 527
EP  - 556
PB  - Transworld Research Network
CY  - Trivandrum, India
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
JF  - Thin solid films. 261 (1995), H. 1-2
Y1  - 1995
SN  - 0040-6090
SP  - 139
EP  - 147
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ...
JF  - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146)
Y1  - 1995
SN  - 0-7503-0347-6
N1  - MSM <9, 1995, Oxford> ; Institut of Physics <London>
SP  - 195
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
A1  - Pfundstein, P.
T1  - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
JF  - Journal of applied physics. 78 (1995), H. 6
Y1  - 1995
SN  - 0021-8979
SP  - 3824
EP  - 3832
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Thust, M.
T1  - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ...
JF  - Philosophical magazine / Letters. 74 (1996), H. 5
Y1  - 1996
SN  - 1362-3036
SP  - 309
EP  - 315
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  -