TY - CHAP A1 - Ritz, Thomas A1 - Terhaar, Kristin A1 - Wallenborn, Ramona ED - Reiterer, Harald T1 - HMI für eCarSharing : ein Baustein für nachhaltige Mobilität T2 - Mensch & Computer 2012 - Workshopband : 12. Fachübergreifende Konferenz für interaktive und kooperative Medien ; interaktiv informiert - allgegenwärtig und allumfassend!? Y1 - 2012 SN - 978-3-486-71990-1 (Print) SN - 978-3-486-71991-8 (E-Book) U6 - http://dx.doi.org/10.1524/9783486719918.341 N1 - Workshop Automotive HMI SP - 381 EP - 388 PB - Oldenbourg CY - München ER - TY - JOUR A1 - Schöning, Michael Josef A1 - Bäcker, Matthias T1 - Chip-basierte Sensoren für die Biotechnik Y1 - 2012 SN - 1611-0854 N1 - 4 Seiten VL - 13 IS - 2 PB - BIOCOM CY - Berlin ER - TY - JOUR A1 - Spelthahn, Heiko A1 - Schubert, Jürgen A1 - Schöning, Michael Josef T1 - Dünnschichtsensoren für die Schwermetallanalytik : Mikroelektroden auf Chalkogenidglasbasis JF - GIT Labor-Fachzeitschrift N2 - Die Detektion von Schadstoffen repräsentiert in der Umweltanalytik eine wichtige Aufgabenstellung. Gerade die Abwasser- bzw. Brauchwasseranalytik sowie die Prozesskontrolle haben einen hohen Stellenwert. Siliziumbasierte Dünnschichtsensoren bieten eine kostengünstige Möglichkeit, „online“-Messungen bzw. Vor-Ort-Messungen zeitnah durchzuführen. In dieser Arbeit wird ein potentiometrisches Sensorarray auf der Basis von Chalkogenidgläsern zur Detektion von Schwermetallen in wässrigen Medien vorgestellt. Y1 - 2012 IS - 4 SP - 285 EP - 287 PB - Wiley-VCH CY - Weinheim ER - TY - CHAP A1 - Takenaga, Shoko A1 - Werner, Frederik A1 - Sawada, Kazuaki A1 - Schöning, Michael Josef T1 - Comparison of label-free ACh image sensors based on CCD and LAPS Y1 - 2012 SN - 978-3-9813484-2-2 U6 - http://dx.doi.org/10.5162/IMCS2012/4.2.6 SP - 356 EP - 359 ER - TY - CHAP A1 - Bohrn, Ulrich A1 - Stütz, Evamaria A1 - Fleischer, Maximilian A1 - Schöning, Michael Josef A1 - Wagner, Patrick T1 - Living cell-based gas sensor system for the detection of acetone in air Y1 - 2012 SN - 978-3-9813484-2-2 U6 - http://dx.doi.org/10.5162/IMCS2012/3.2.3 SP - 269 EP - 272 ER - TY - CHAP A1 - Bohrn, Ulrich A1 - Mucha, Andreas A1 - Werner, Frederik A1 - Stütz, Evamaria A1 - Bäcker, Matthias A1 - Krumbe, Christoph A1 - Schienle, Meinrad A1 - Fleischer, Maximilian A1 - Wagner, Patrick A1 - Schöning, Michael Josef T1 - Detection of toxic chromium species in water using cellbased sensor systems Y1 - 2012 SN - 978-3-9813484-2-2 U6 - http://dx.doi.org/10.5162/IMCS2012/P2.1.14 SP - 1364 EP - 1367 ER - TY - CHAP A1 - Weil, M. A1 - Poghossian, Arshak A1 - Schöning, Michael Josef A1 - Cherstvy, A. T1 - Electrical monitoring of layer-by-layer adsorption of oppositely charged macromolecules by means of capacitive field-effect devices Y1 - 2012 SN - 978-3-9813484-2-2 U6 - http://dx.doi.org/10.5162/IMCS2012/P2.5.2 SP - 1575 EP - 1578 ER - TY - THES A1 - Bragard, Michael T1 - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62) N2 - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified. Y1 - 2012 SN - 978-3-8440-1152-4 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 2012 PB - Shaker CY - Aachen ER - TY - JOUR A1 - Bragard, G. A1 - Bragard, Michael T1 - Ein kostengünstiges, universelles Modellbauinterface JF - Der mathematische und naturwissenschaftliche Unterricht : MNU ; Organ des Deutschen Vereins zur Förderung des Mathematischen und Naturwissenschaftlichen Unterrichts e.V. N2 - Wir stellen einen USB-Baustein vor, der eine kostengünstige und universelle Möglichkeit schafft , im Unterricht den Themenkreis Messen-Steuern-Regeln zu behandeln. Die Funktionalität orientiert sich am CVK-Interface der Firma Fischertechnik. Im Gegensatz zu kommerziellen Lösungen erlaubt unser Aufbau auch den preiswerten Einsatz in Gruppen- oder Einzelarbeit. Abschließend berichten wir über ein Beispiel aus dem Unterrichtseinsatz. Y1 - 2012 SN - 0025-5866 VL - 65 IS - 5 SP - 290 EP - 293 PB - Seeberger CY - Neuss ER - TY - JOUR A1 - Bragard, Michael A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance JF - IEEE transactions on power electronics N2 - This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided. Y1 - 2012 U6 - http://dx.doi.org/10.1109/TPEL.2012.2189136 SN - 0885-8993 VL - 27 IS - 9 SP - 4163 EP - 4171 PB - IEEE CY - New York ER -