TY - JOUR
A1 - Thielemann, Frank
A1 - Lang, Franz Peter
T1 - Wissensmanagement und neue Informationstechnologie . Lang, Franz Peter; Thielemann, Frank
JF - Veränderungsmanagement in der Sozialwirtschaft / Bernd Maelicke (Hrsg.)
Y1 - 2000
SN - 3-7890-6738-5
N1 - Inhaltsverzeichnis
SP - 132
EP - 172
PB - Nomos-Verl.-Ges.
CY - Baden-Baden
ER -
TY - JOUR
A1 - Temiz Artmann, Aysegül
A1 - Başkurt, Oǧuz Kerim
A1 - Pekcetin, C.
A1 - Kandemir, F.
T1 - Leukocyte activation, oxidant stress and red blood cell properties after acute, exhausting exercise in rats. Temiz, A.; Baskurt, O. K., Pekcetin, C.; Kandemir, F.; Güre, A.
JF - Clinical Hemorheology and Microcirculation. 22 (2000), H. 4
Y1 - 2000
SN - 1386-0291
SP - 253
EP - 259
ER -
TY - JOUR
A1 - Schneider, Bettina
A1 - Schneider, Wilhelm
T1 - Finanzierungsprobleme bei Unternehmensgründungen aus Sicht des Gründers - Erfahrungen aus der Praxis
JF - Werte messen, Werte schaffen : von der Unternehmensbewertung zum Shareholder-Value-Management ; Festschrift für Dr. Karl-Heinz Maul zum 60. Geburtstag / Hansjörg Arnold ... [Hrsg]
Y1 - 2000
SN - 3-409-11623-0
SP - 463
EP - 478
PB - Gabler
CY - Wiesbaden
ER -
TY - JOUR
A1 - Vitusevich, S. A.
A1 - Förster, Arnold
A1 - Reetz, W.
A1 - Lüth, H.
A1 - Belyaev, A. E.
A1 - Danylyuk, S. V.
T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
JF - Nanotechnology. 11 (2000), H. 4
Y1 - 2000
SN - 1361-6528
SP - 305
EP - 308
ER -
TY - JOUR
A1 - Schmidt, R.
A1 - Tonnesmann, A.
A1 - Förster, Arnold
A1 - Grimm, M.
A1 - Kordos, P.
A1 - Lüth, H.
T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1 - 2000
SN - 0-7803-6550-X
N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP - 95
EP - 98
PB - IEEE Operations Center
CY - Piscataway, NJ
ER -
TY - JOUR
A1 - Rosenauer, A.
A1 - Oberst, W.
A1 - Litvinov, D.
A1 - Gerthsen, D.
A1 - Förster, Arnold
A1 - Schmidt, R.
T1 - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF - Physical Review B. 61 (2000), H. 12
Y1 - 2000
SN - 1095-3795
SP - 8276
EP - 8288
ER -
TY - JOUR
A1 - Hoskens, R. C. P.
A1 - Tolstikhin, V.I.
A1 - Förster, Arnold
A1 - Roer, T.G. van de
T1 - Vertically integrated transistor-laser structure, take 2
JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1 - 2000
SN - 0970311109
N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB - Univ. of Michigan
CY - Ann Arbor, Mich.
ER -
TY - JOUR
A1 - Darmo, J.
A1 - Schäffer, F.
A1 - Förster, Arnold
A1 - Kordos, P.
T1 - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1 - 2000
SN - 0780359399
N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP - 147
EP - 150
PB - IEEE
CY - Piscataway, NJ
ER -
TY - JOUR
A1 - Hodel, U.
A1 - Orzati, A.
A1 - Marso, M.
A1 - Homann, O.
A1 - Fox, A.
A1 - Hart, A. v. d.
A1 - Förster, Arnold
A1 - Kordos, P.
A1 - Lüth, H.
T1 - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
JF - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials
Y1 - 2000
SN - 0-7803-6320-5
N1 - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.>
SP - 466
EP - 469
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - JOUR
A1 - Hoskens, R.C.P.
A1 - Roer, T.G. van de
A1 - Tolstikhin, V.I.
A1 - Förster, Arnold
T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2
Y1 - 2000
SN - 0-7803-5947-X
N1 - 2000 IEEE LEOS annual meeting
SP - 444
EP - 445
PB - IEEE Service Center
CY - Piscataway, NJ
ER -