TY  - CHAP
A1  - Welden, Melanie
A1  - Severins, Robin
A1  - Poghossian, Arshak
A1  - Wege, Christina
A1  - Siegert, Petra
A1  - Keusgen, Michael
A1  - Schöning, Michael Josef
T1  - Studying the immobilization of acetoin reductase with Tobacco mosaic virus particles on capacitive field-effect sensors
T2  - 2022 IEEE International Symposium on Olfaction and Electronic Nose (ISOEN)
N2  - A capacitive electrolyte-insulator-semiconductor (EISCAP) biosensor modified with Tobacco mosaic virus (TMV) particles for the detection of acetoin is presented. The enzyme acetoin reductase (AR) was immobilized on the surface of the EISCAP using TMV particles as nanoscaffolds. The study focused on the optimization of the TMV-assisted AR immobilization on the Ta 2 O 5 -gate EISCAP surface. The TMV-assisted acetoin EISCAPs were electrochemically characterized by means of leakage-current, capacitance-voltage, and constant-capacitance measurements. The TMV-modified transducer surface was studied via scanning electron microscopy.
KW  - Tobacco mosaic virus
KW  - acetoin
KW  - capacitive field-effect biosensor
KW  - enzyme immobilization
Y1  - 2022
SN  - 978-1-6654-5860-3 (Online)
SN  - 978-1-6654-5861-0 (Print)
U6  - http://dx.doi.org/10.1109/ISOEN54820.2022.9789657
N1  - IEEE International Symposium on Olfaction and Electronic Nose (ISOEN), 29 May 2022 - 01 June 2022, Aveiro, Portugal.
PB  - IEEE
ER  - 
TY  - JOUR
A1  - Molinnus, Denise
A1  - Iken, Heiko
A1  - Johnen, Anna Lynn
A1  - Richstein, Benjamin
A1  - Hellmich, Lena
A1  - Poghossian, Arshak
A1  - Knoch, Joachim
A1  - Schöning, Michael Josef
T1  - Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta₂O₅ Films Prepared by Atomic Layer Deposition
JF  - physica status solidi (a) applications and materials science
N2  - Miniaturized electrolyte–insulator–semiconductor capacitors (EISCAPs) with ultrathin gate insulators have been studied in terms of their pH-sensitive sensor characteristics: three different EISCAP systems consisting of Al–p-Si–Ta2O5(5 nm), Al–p-Si–Si3N4(1 or 2 nm)–Ta2O5 (5 nm), and Al–p-Si–SiO2(3.6 nm)–Ta2O5(5 nm) layer structures are characterized in buffer solution with different pH values by means of capacitance–voltage and constant capacitance method. The SiO2 and Si3N4 gate insulators are deposited by rapid thermal oxidation and rapid thermal nitridation, respectively, whereas the Ta2O5 film is prepared by atomic layer deposition. All EISCAP systems have a clear pH response, favoring the stacked gate insulators SiO2–Ta2O5 when considering the overall sensor characteristics, while the Si3N4(1 nm)–Ta2O5 stack delivers the largest accumulation capacitance (due to the lower equivalent oxide thickness) and a higher steepness in the slope of the capacitance–voltage curve among the studied stacked gate insulator systems.
KW  - atomic layer deposition
KW  - capacitive field-effect sensors
KW  - pH sensors
KW  - ultrathin gate insulators
Y1  - 2022
U6  - http://dx.doi.org/10.1002/pssa.202100660
SN  - 1862-6319
VL  - 219
IS  - 8
PB  - Wiley-VCH
CY  - Weinheim
ER  -