TY  - JOUR
A1  - Bragard, Michael
A1  - Conrad, M.
A1  - van Hoek, H.
A1  - De Doncker, R. W.
T1  - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off
JF  - IEEE transactions on industry applications
Y1  - 2011
U6  - http://dx.doi.org/10.1109/TIA.2011.2161432
SN  - 0093-9994
VL  - 47
IS  - 5
SP  - 2175
EP  - 2182
PB  - IEEE
CY  - New York
ER  - 
TY  - JOUR
A1  - Bragard, Michael
A1  - Soltau, N.
A1  - Thomas, S.
A1  - De Doncker, R. W.
T1  - The balance of renewable sources and user demands in grids : power electronics for modular battery energy storage systems
JF  - IEEE transactions on power electronics
N2  - The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage.
Y1  - 2010
U6  - http://dx.doi.org/10.1109/TPEL.2010.2085455
SN  - 0885-8993
VL  - 25
IS  - 12
SP  - 3049
EP  - 3056
PB  - IEEE
CY  - New York
ER  - 
TY  - JOUR
A1  - Bragard, Michael
A1  - van Hoek, H.
A1  - De Doncker, R. W.
T1  - A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance
JF  - IEEE transactions on power electronics
N2  - This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.
Y1  - 2012
U6  - http://dx.doi.org/10.1109/TPEL.2012.2189136
SN  - 0885-8993
VL  - 27
IS  - 9
SP  - 4163
EP  - 4171
PB  - IEEE
CY  - New York
ER  - 
TY  - JOUR
A1  - Köllensperger, P.
A1  - Bragard, Michael
A1  - Plum, T.
A1  - De Doncker, R. W.
T1  - The dual GCT : new high-power device using optimized GCT technology
JF  - IEEE transactions on industry applications
Y1  - 2009
U6  - http://dx.doi.org/10.1109/TIA.2009.2027364
SN  - 0093-9994
VL  - 45
IS  - 5
SP  - 1754
EP  - 1762
ER  -