TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - O´Bryan, H. M. T1 - Grain boundary and surface segragation of Ba-Ti-O-Phases in rutile. O´Bryan, H. M.; Hagemann, H. J. JF - Journal of the American Ceramic Society. 70 (1987) Y1 - 1987 SN - 0002-7820 SP - 274 EP - 278 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Bachmann, P. K. A1 - Lade, H. A1 - Leers, D. T1 - Influence of the gas phase on diamond deposition and diamond properties. Bachmann, P. K.; Hagemann, H.J.; Lade, H.; Leers, D.; Picht, F.; Wiechert, D. U. JF - Advanced materials '94 : proceedings of the NIRIM International Symposium on Advanced Materials '94, Tsukuba, Japan, March 13 - 17, 1994 / National Institute for Research in Inorganic Materials. Ed. by M. Kamo Y1 - 1994 N1 - NIRIM International Symposium on Advanced Materials ; <1994, Tsukuba> SP - 115 EP - 120 PB - International Communications Specialists, Inc. CY - Tokyo ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Lade, H. A1 - Warnier, J. A1 - Wiechert, D. U. T1 - The performance of Depressed-Cladding Single-Mode Fibres with Different b/a Ratios. Hagemann, H.-J.; Lade, H.; Warnier, J.; Wiechert, D. U. JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 9 (1991), H. 6 Y1 - 1991 SN - 0733-8724 SP - 689 EP - 694 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Wiechert, D. U. T1 - Measurements and calculations of the LP01 intensity of SM fibres far off the core. Hagemann, H.-J.; Wiechert, D. U. JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 10 (1992), H. 4 Y1 - 1992 SN - 0733-8724 SP - 407 EP - 412 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. T1 - PCVD hybrid technology for single mode fibres. Hagemann, H. J.; Geittner, P. JF - Proceedings : papers presented at: the 8th Annual European Fibre Optic Communications and Local Area Networks Exposition Y1 - 1990 N1 - EFOC LAN <8, 1990, München> SP - 67 EP - 72 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. A1 - Warnier, J. A1 - Wilson, H. T1 - PCVD at high deposition rates. Geittner, P.; Hagemann, H. J.; Warnier, J.; Wilson, H. JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 4 (1986), H. 7 Y1 - 1986 SN - 0733-8724 SP - 818 EP - 822 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. A1 - Lydtin, H. A1 - Warnier, J. T1 - Hybrid technology for large SM-fiber preforms. Geittner, P.; Hagemann, H. J.; Lydtin, H.; Warnier, J. JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 6 (1988), H. 10 Y1 - 1988 SN - 0733-8724 SP - 1451 EP - 1454 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Ungelenk, J. A1 - Wiechert, D. U. T1 - Optical time domain reflectometry (OTDR) of diameter modulations in single-mode fibers. Hagemann, H. J.; Ungelenk, J.; Wiechert, D. U. JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 8 (1990), H. 11 Y1 - 1990 SN - 0733-8724 SP - 1641 EP - 1645 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. A1 - Leers, D. T1 - Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD. Geittner, P.; Hagemann, H. J. ; Leers, D. JF - Electronics letters : an intern. publication / The Institution of Electrical Engineers. 25 (1989), H. 7 Y1 - 1989 SN - 0013-5194 SP - 436 EP - 437 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Stumpe, R. A1 - Wagner, D. A1 - Bäuerle, D. T1 - The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; Bäuerle, D.; Hagemann, H. J. JF - Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985) Y1 - 1985 SN - 0731-5171 SP - 143 EP - 147 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. A1 - Warnier, J. A1 - Weling, F. T1 - Reduction of geometric taper losses in the PCVD process. Geittner, P.; Hagemann, H. J.; Warnier, J.; Weling, F.; Wilson, H. JF - Electronics letters : an intern. publication / The Institution of Electrical Engineers. 21 (1985), H. 13 Y1 - 1985 SN - 0013-5194 SP - 870 EP - 871 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Hennings, D. T1 - Reversible Weight change of acceptor-doped BaTiO3. Hagemann, H. J.; Hennings, D. JF - Journal of the American Ceramic Society. 64 (1981) Y1 - 1981 SN - 0002-7820 SP - 590 EP - 594 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Hennings, D. A1 - Wernicke, R. T1 - Ceramic multilayer capacitors. Hagemann, H. J.; Hennings, D.; Wernicke, R. JF - Philips' technical review / Philips' Gloeilampenfabrieken. Philips' Gloeilampenfabrieken . 41 (1984) Y1 - 1984 SN - 0031-7926 SP - 89 EP - 98 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Hennings, D. A1 - Wernicke, R. T1 - Keramische Vielschichtkondensatoren. Hagemann, H. J.; Hennings, D.; Wernicke, R. JF - Sprechsaal : internat. ceramics & glass magazine. 117 (1984) Y1 - 1984 SN - 0341-0439 N1 - weitere ISSN 0341-0676 SP - 924 EP - 931 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Geittner, P. A1 - Schnittker, W. A1 - Warnier, J. T1 - Abscheidegeschwindigkeiten und Prozeßausbeuten im PCVD-Verfahren. Geittner, P.; Hagemann, H. J.; Schnittker, W.; Warnier, J.; Weling, F.; Wilson, H. JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 4 (1989) Y1 - 1989 SP - 140 EP - 143 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen T1 - Störstellengleichgewichte in eisendotierten Titanaten. Hagemann, H. J. JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 4 (1989) Y1 - 1989 SP - 170 EP - 172 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Hero, A. A1 - Gonser, U. T1 - The valence change of Fe in BaTiO3 studied by Mößbauer effect and gravimetry. Hagemann, H. J.; Hero, A.; Gonser, U. JF - Physica Status Solidi (A) - Applied Research. 61 (1980) Y1 - 1980 SN - 0031-8965 SP - 63 EP - 72 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Ihrig, H. T1 - Valence change and phase stability of 3d-doped BaTiO3 annealed in oxygen and hydrogen. Hagemann, H. J.; Ihrig, H. JF - Physical Review B.. 20 (1979), H. 9 Y1 - 1979 SN - 1095-3795 SP - 3871 EP - 3878 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen A1 - Ihrig, H. T1 - BaTiO3 dotiert mit 3d-Ionen: Valenzen, Leerstellen und ihre Auswirkungen. Hagemann, H. J.; Ihrig, H. JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 3 (1980) Y1 - 1980 SP - 249 EP - 252 ER - TY - JOUR A1 - Hagemann, Hans-Jürgen T1 - Loss mechanisms and domain stabilization in doped BaTiO₃ JF - Journal of Physics C: Solid State Physics Y1 - 1978 SN - 0022-3719 U6 - http://dx.doi.org/10.1088/0022-3719/11/15/031 VL - 11 IS - 15 SP - 3333 EP - 3344 PB - n.a. CY - London ER -