TY - JOUR A1 - Thust, Marion A1 - Schöning, Michael Josef A1 - Frohnhoff, S. A1 - Arens-Fischer, R. A1 - Kordos, P. A1 - Lüth, H. T1 - Porous silicon as a substrate material for potentiometric biosensors JF - Measurement Science and Technology Y1 - 1996 U6 - http://dx.doi.org/10.1088/0957-0233/7/1/003 VL - 7 IS - 1 SP - 26 EP - 29 ER - TY - JOUR A1 - Schütz, S. A1 - Weißbecker, B. A1 - Hummel, Hans E. A1 - Schöning, Michael Josef A1 - Riemer, A. A1 - Kordos, P. A1 - Lüth, H. T1 - Field effect transistor-insect antenna junction JF - Naturwissenschaften Y1 - 1997 SN - 1432-1904 VL - 84 SP - 86 EP - 88 ER - TY - JOUR A1 - Mikulics, M. A1 - Adam, R. A1 - Kordos, P. A1 - Förster, Arnold A1 - Lüth, H. A1 - Wu, S. A1 - Zheng, X. A1 - Sobolewski, R. T1 - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates JF - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8 Y1 - 2005 SN - 1041-1135 SP - 1725 EP - 1727 ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1 Y1 - 1996 SN - 0-7803-3180-X N1 - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898 SP - 579 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2 Y1 - 1996 SN - 0018-9499 SP - 1446 EP - 1451 ER - TY - JOUR A1 - Förster, Arnold A1 - Leuther, A. A1 - Lüth, H. T1 - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ... JF - Semiconductor science and technology. 11 (1996), H. 5 Y1 - 1996 SN - 1361-6641 SP - 766 EP - 771 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Protic, D. A1 - Lüth, H. T1 - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth JF - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3 Y1 - 1995 SN - 0168-9002 SP - 324 EP - 329 ER - TY - JOUR A1 - Förster, Arnold A1 - Kohleick, R. A1 - Lüth, H. T1 - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth JF - Physical Review B . 48 (1993), H. 20 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15138 EP - 15143 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) / JF - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1 Y1 - 1988 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 SP - 95 EP - 97 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4 Y1 - 1989 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 720 EP - 724 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy JF - Applied Surface Science. 41 - 42 (1989) Y1 - 1989 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 306 EP - 311 ER - TY - JOUR A1 - Förster, Arnold A1 - Tulke, A. A1 - Lüth, H. T1 - The Schottky barrier at the InSb(110)–Sn interface JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4 Y1 - 1987 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1054 EP - 1056 ER - TY - JOUR A1 - Förster, Arnold A1 - Rizzi, Angela A1 - Lüth, H. T1 - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth JF - Surface Science. 211 - 212 (1989) Y1 - 1989 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 620 EP - 629 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy JF - Surface Science. 189-190 (1987) Y1 - 1987 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 307 EP - 314 ER - TY - JOUR A1 - Förster, Arnold A1 - Spitzer, A. A1 - Lüth, H. T1 - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy JF - Surface Science. 172 (1986), H. 1 Y1 - 1986 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 174 EP - 182 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, M. A1 - Lüth, H. T1 - Transport through a buried double barrier single electron transistor at low temperatures JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 502 EP - 506 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER -