TY  - JOUR
A1  - Förster, Arnold
A1  - Lohe, C.
A1  - Leuther, A.
T1  - Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
JF  - Physical Review B . 47 (1993), H. 7
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 3819
EP  - 3826
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kohleick, R.
A1  - Lüth, H.
T1  - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure  / R. Kohleick ; A. Förster ; H. Lüth
JF  - Physical Review B . 48 (1993), H. 20
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15138
EP  - 15143
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zettler, J.-T.
A1  - Mikkelsen, H.
A1  - Leo, K.
T1  - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
JF  - Physical Review B . 46 (1992), H. 24
Y1  - 1992
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15955
EP  - 15962
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Semi-insulating GaAs layers grown by molecular-beam epitaxy /  P. Kordos ; A. Förster ; J. Betko ...
JF  - Applied physics letters. 67 (1995), H. 7
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 983
EP  - 985
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Haug, R. J.
T1  - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Applied physics letters. 68 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 838
EP  - 840
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lentzen, M.
A1  - Gerthsen, D.
T1  - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
JF  - Applied physics letters. 60 (1992), H. 1
Y1  - 1992
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 74
EP  - 76
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Krüger, M.
A1  - Appenzeller, J.
T1  - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
JF  - Applied physics letters. 66 (1995), H. 26
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3603
EP  - 3606
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
JF  - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1
Y1  - 1988
SN  - 0947-8396
N1  - ISSN der E-Ausg.: 1432-0630
SP  - 95
EP  - 97
ER  - 
TY  - JOUR
A1  - Bansal, N. K.
A1  - Müller, C.
A1  - Vieira, M. E.
A1  - Faber, Christian
A1  - Schwarzer, Klemens
T1  - Thermal performance of a rock bed storage system
JF  - Proceedings : University of Stuttgart, Germany, August 28th until September 1st, 2000 / Terrastock 2000, 8th International Conference on Thermal Energy Storage. Ed.: M. Benner ... - Vol. 1
Y1  - 2000
SN  - 3-9805274-1-7
N1  - Terrastock <2000, Stuttgart>  ; Institut für Thermodynamik und Wärmetechnik <Stuttgart>
SP  - 433
EP  - 439
PB  - Inst. für Thermodynamik und Wärmetechnik
CY  - Stuttgart
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4
Y1  - 1989
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 720
EP  - 724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1743
EP  - 1747
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1728
EP  - 1735
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  -