TY - JOUR A1 - Poghossian, Arshak A1 - Ingebrandt, S. A1 - Abouzar, Maryam H. A1 - Schöning, Michael Josef T1 - Label-free detection of charged macromolecules by using a field-effect-based sensor platform: Experiments and possible mechanisms of signal generation JF - Applied Physics A: Materials Science & Processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - Special Issue “From Surface Science to Nanoscale Devices” SP - 517 EP - 524 ER - TY - JOUR A1 - Poghossian, Arshak A1 - Abouzar, Maryam H. A1 - Sakkari, M. A1 - Kassab, T. A1 - Han, Y. A1 - Ingebrandt, S. A1 - Offenhäusser, A. A1 - Schöning, Michael Josef T1 - Field-effect sensors for monitoring the layer-by-layer adsorption of charged macromolecules JF - Sensors and Actuators B: Chemical. 118 (2006), H. 1-2 Y1 - 2006 SN - 0925-4005 N1 - Eurosensors XIX - Eurosensors XIX - The 19th European Conference on Solid-State Transducers SP - 163 EP - 170 ER - TY - JOUR A1 - Kloock, Joachim P. A1 - Moreno, Lia A1 - Bratov, A. A1 - Huachupoma, S. A1 - Xu, J. A1 - Wagner, Torsten A1 - Yoshinobu, T. A1 - Ermolenko, Y. A1 - Vlasov, Y. G. A1 - Schöning, Michael Josef T1 - PLD-prepared cadmium sensors based on chalcogenide glasses —ISFET, LAPS and μISE semiconductor structures JF - Sensors and Actuators B: Chemical. 118 (2006), H. 1-2 Y1 - 2006 SN - 0925-4005 N1 - Eurosensors XIX - Eurosensors XIX - The 19th European Conference on Solid-State Transducers SP - 149 EP - 155 ER - TY - JOUR A1 - Wagner, Torsten A1 - Rao, C. A1 - Kloock, Joachim P. A1 - Yoshinobu, T. A1 - Otto, R. A1 - Keusgen, M. A1 - Schöning, Michael Josef T1 - “LAPS Card”—A novel chip card-based light-addressable potentiometric sensor (LAPS) JF - Sensors and Actuators B: Chemical. 118 (2006), H. 1-2 Y1 - 2006 SN - 0925-4005 N1 - Eurosensors XIX - Eurosensors XIX - The 19th European Conference on Solid-State Transducers SP - 33 EP - 40 ER - TY - JOUR A1 - Schöning, Michael Josef A1 - Brinkmann, D. A1 - Rolka, David A1 - Demuth, C. A1 - Poghossian, Arshak T1 - CIP (cleaning-in-place) suitable “non-glass” pH sensor based on a Ta2O5-gate EIS structure JF - Sensors and Actuators B: Chemical. 111-112 (2005) Y1 - 2005 SN - 0925-4005 N1 - Eurosensors XVIII 2004 - The 18th European Conference on Solid-State Transducers SP - 423 EP - 429 ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - JOUR A1 - Srnanek, R. A1 - Geurts, J. A1 - Lentze, M. A1 - Irmer, G. A1 - Donoval, D. A1 - Brdecka, P. A1 - Kordos, P. A1 - Förster, Arnold A1 - Sciana, B. A1 - Radziewicz, D. A1 - Tlaczala, M. T1 - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples JF - Applied surface science . 230 (2004), H. 1 -4 Y1 - 2004 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 379 EP - 385 ER - TY - JOUR A1 - Mikulics, M. A1 - Adam, R. A1 - Kordos, P. A1 - Förster, Arnold A1 - Lüth, H. A1 - Wu, S. A1 - Zheng, X. A1 - Sobolewski, R. T1 - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates JF - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8 Y1 - 2005 SN - 1041-1135 SP - 1725 EP - 1727 ER - TY - JOUR A1 - Maezawa, Koichi A1 - Förster, Arnold T1 - Quantum transport devices based on resonant tunneling JF - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.). Y1 - 2003 SN - 3-527-40363-9 SP - 407 EP - 424 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Zatko, B. A1 - Dubecký, F. A1 - Bohacek, P. A1 - Gombia, E. A1 - Frigeri, P. A1 - Mosca, R. A1 - Franchi, S. A1 - Huarn, J. A1 - Nescas, V. A1 - Sekacova, M. A1 - Förster, Arnold A1 - Kordos, P. T1 - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs JF - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2 Y1 - 2004 SN - 0168-9002 SP - 111 EP - 120 ER - TY - JOUR A1 - Poghossian, Arshak A1 - Abouzar, Maryam H. A1 - Christiaens, P. A1 - Williams, O. A. A1 - Haenen, K. A1 - Wagner, P. A1 - Schöning, Michael Josef T1 - Nanocrystalline diamond-based field-effect (bio-)chemical sensor JF - 8. Dresdner Sensor-Symposium : Sensoren für Umwelt, Klima und Sicherheit, Biosensoren und Biosysteme, Sensoren und Sensorsysteme für die Prozesstechnik, Trends in der Sensortechnik, Materialentwicklung für die Sensorik; 8. Dresdner Sensor-Symposium, 10. - 12. Dezember 2007, Dresden / Gerald Gerlach ... (Hg.) Y1 - 2007 SN - 978-3-940046-45-1 N1 - Dresdner Sensor-Symposium <8, 2007, Dresden> ; Dresdner Beiträge zur Sensorik ; 29 SP - 191 EP - 194 PB - TUDpress, Verl. der Wissenschaften CY - Dresden ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Rosenauer, A. A1 - Oberst, W. A1 - Litvinov, D. A1 - Gerthsen, D. A1 - Förster, Arnold A1 - Schmidt, R. T1 - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy JF - Physical Review B. 61 (2000), H. 12 Y1 - 2000 SN - 1095-3795 SP - 8276 EP - 8288 ER - TY - JOUR A1 - Hoskens, R. C. P. A1 - Tolstikhin, V.I. A1 - Förster, Arnold A1 - Roer, T.G. van de T1 - Vertically integrated transistor-laser structure, take 2 JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece. Y1 - 2000 SN - 0970311109 N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02) PB - Univ. of Michigan CY - Ann Arbor, Mich. ER - TY - JOUR A1 - Darmo, J. A1 - Schäffer, F. A1 - Förster, Arnold A1 - Kordos, P. T1 - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range JF - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.] Y1 - 2000 SN - 0780359399 N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia) SP - 147 EP - 150 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Hodel, U. A1 - Orzati, A. A1 - Marso, M. A1 - Homann, O. A1 - Fox, A. A1 - Hart, A. v. d. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver JF - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials Y1 - 2000 SN - 0-7803-6320-5 N1 - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.> SP - 466 EP - 469 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER -