TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
JF  - Journal of Physics D: Applied Physics. 30 (1997), H. 10
Y1  - 1997
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 1436
EP  - 1441
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1728
EP  - 1735
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rose, D.
A1  - Pietsch, U.
A1  - Metzger, H.
T1  - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H....
JF  - Physica B: condensed matter. 198 (1994), H. 1-3
Y1  - 1994
SN  - 0921-4526
SP  - 256
EP  - 258
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rose, D.
A1  - Pietsch, U.
A1  - Metzger, T. H.
T1  - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H.
JF  - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4
Y1  - 1995
SN  - 0168-583X
SP  - 333
EP  - 336
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.;  Gerthsen D.;  Förster A.
JF  - Ultramicroscopy. 72 (1998), H. 3-4
Y1  - 1998
SN  - 0304-3991
SP  - 121
EP  - 133
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
JF  - Applied physics letters. 71 (1997), H. 26
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3868
EP  - 3870
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Gerthsen, D.
T1  - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
JF  - Thin Solid Films. 357 (1999)
Y1  - 1999
SN  - 0040-6090
SP  - 18
EP  - 21
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Remmele, T.
T1  - Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A. Rosenauer ; T. Remmele ; U. Fischer ; A. Förster ...
JF  - Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7 - 10 April 1997 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 157)
Y1  - 1997
SN  - 0-7503-0464-2
N1  - MSM <10, 1997, Oxford> ; Conference on Microscopy of Semiconducting Materials <10, 1997, Oxford> ; Institut of Physics <London>
SP  - 39
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Remmele, T.
T1  - Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images / A. Rosenauer ; T. Remmele ; D. Gerthsen ... A. Förster
JF  - Optik : international journal for light and electron optics. 105 (1997), H. 3
Y1  - 1997
SN  - 0030-4026
SP  - 99
EP  - 107
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 55 (1997), H. 4
Y1  - 1997
SN  - 1095-3795
SP  - 2230
EP  - 2236
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
JF  - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3
Y1  - 1996
SN  - 981-02-2947-X
N1  - International Conference on the Physics of Semiconductors <23, 1996, Berlin>
SP  - 2251
EP  - ff.
PB  - World Scientific
CY  - Singapore [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
JF  - Europhysics letters. 36 (1996), H. 1
Y1  - 1996
SN  - 1286-4854
SP  - 61
EP  - 66
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
JF  - Physical review letters. 78 (1997), H. 8
Y1  - 1997
SN  - 0031-9007
N1  - ISSN der E-Ausg.: 1079-7114
SP  - 1544
EP  - 1547
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. Förster ...
JF  - Physical review letters. 78 (1997), H. 8
Y1  - 1997
SN  - 0031-9007
N1  - ISSN der E-Ausg.: 1079-7114
SP  - 1540
EP  - 1543
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
T1  - Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 15
EP  - 19
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Blick, R. H.
T1  - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5570
EP  - 5573
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Haug, R. J.
T1  - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Applied physics letters. 68 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 838
EP  - 840
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäfer, B.-J.
A1  - Londschien, M.
T1  - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ;  A. Förster ; M. Londschien ...
JF  - Surface Science. 204 (1988), H. 3
Y1  - 1988
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 485
EP  - 490
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Krüger, M.
A1  - Appenzeller, J.
T1  - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
JF  - Applied physics letters. 66 (1995), H. 26
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3603
EP  - 3606
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
T1  - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
JF  - Surface Science. 305 (1994), H. 1-3
Y1  - 1994
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 460
EP  - 464
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
A1  - Lengeler, B.
T1  - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T.  ; Müller, F.  ; Förster, A. ; Lengeler, B. ; Lüth, H.
JF  - Superlattices and microstructures . 14 (1993), H. 1
Y1  - 1993
SN  - 0749-6036
SP  - 57
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schönhut, J.
A1  - Metzner, C.
T1  - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 701
EP  - 705
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Spitzer, A.
A1  - Lüth, H.
T1  - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
JF  - Surface Science. 172 (1986), H. 1
Y1  - 1986
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 174
EP  - 182
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Stock, J.
A1  - Indlekofer, K. M.
T1  - Perspectives of resonant tunneling diodes
JF  - Recent research developments in materials science & engineering/ 1,2
Y1  - 2002
SN  - 81-7895-057-X
N1  - Nebent.: Materials science & engineering
SP  - 527
EP  - 556
PB  - Transworld Research Network
CY  - Trivandrum, India
ER  - 
TY  - CHAP
A1  - Förster, Arnold
A1  - Stock, Jürgen
A1  - Montanari, Simone
A1  - Lepsa, Mihail Ion
A1  - Lüth, Hans
T1  - Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry
N2  - GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.
KW  - Biosensor
KW  - Gunn diode
KW  - microwave generation
KW  - GaAs hot electron injector
Y1  - 2006
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:hbz:a96-opus-1462
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
JF  - Thin solid films. 261 (1995), H. 1-2
Y1  - 1995
SN  - 0040-6090
SP  - 139
EP  - 147
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ...
JF  - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146)
Y1  - 1995
SN  - 0-7503-0347-6
N1  - MSM <9, 1995, Oxford> ; Institut of Physics <London>
SP  - 195
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
A1  - Pfundstein, P.
T1  - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
JF  - Journal of applied physics. 78 (1995), H. 6
Y1  - 1995
SN  - 0021-8979
SP  - 3824
EP  - 3832
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Thust, M.
T1  - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ...
JF  - Philosophical magazine / Letters. 74 (1996), H. 5
Y1  - 1996
SN  - 1362-3036
SP  - 309
EP  - 315
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Indlekofer, K. M.
T1  - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
JF  - Microelectronic Engineering. 46 (1999), H. 1-4
Y1  - 1999
SN  - 0167-9317
N1  - International Conference on Micro- and Nanofabrication
SP  - 169
EP  - 172
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Sheka, D. I.
T1  - Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R.
JF  - Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: Günther Bauer ...
Y1  - 2002
N1  - International  Conference  on Modulated Semiconductor Structures ; (10, 2001, Linz). Zugleich: Physica E: Low-dimensional Systems and Nanostructures. 13(2002)2-4. ISSN 1386-9477
SP  - 811
EP  - 813
PB  - Elsevier
CY  - Amsterdam [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, B. A.
T1  - Intrinsic bistability effect in delta doped tunneling diodes /  S. A. Vitusevich ; A. Förster ; B. A.  Belyaev ...
JF  - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz
Y1  - 1999
N1  - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5
CY  - Warsaw
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Wensorra, J.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
JF  - Nano Letters. 5 (2005)
Y1  - 2005
SN  - 0587-4246
SP  - 2470
EP  - 2475
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - McIntosh, K. A.
T1  - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ;  McIntosh K. A. ; Verghise, S. ; Förster, A.
JF  - Applied Physics Letters. 75 (1999), H. 24
Y1  - 1999
SN  - 1077-3118
SP  - 3877
EP  - 3879
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - Verghese, S.
T1  - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
JF  - Applied Physics Letters. 74 (1999), H. 7
Y1  - 1999
SN  - 1077-3118
SP  - 1039
EP  - 1041
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zettler, J.-T.
A1  - Mikkelsen, H.
A1  - Leo, K.
T1  - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
JF  - Physical Review B . 46 (1992), H. 24
Y1  - 1992
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15955
EP  - 15962
ER  - 
TY  - JOUR
A1  - Hodel, U.
A1  - Orzati, A.
A1  - Marso, M.
A1  - Homann, O.
A1  - Fox, A.
A1  - Hart, A. v. d.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
JF  - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials
Y1  - 2000
SN  - 0-7803-6320-5
N1  - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.>
SP  - 466
EP  - 469
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Hoskens, R. C. P.
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
A1  - Roer, T.G. van de
T1  - Vertically integrated transistor-laser structure, take 2
JF  - WOCSDICE  2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1  - 2000
SN  - 0970311109
N1  - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB  - Univ. of Michigan
CY  - Ann Arbor, Mich.
ER  - 
TY  - JOUR
A1  - Hoskens, R.C.P.
A1  - Roer, T.G. van de
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
T1  - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
JF  - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2
Y1  - 2000
SN  - 0-7803-5947-X
N1  - 2000 IEEE LEOS annual meeting
SP  - 444
EP  - 445
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Krafft, B.
A1  - Förster, Arnold
A1  - Hart, A. van der
A1  - Schäpers, T.
T1  - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
JF  - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4
Y1  - 2001
SN  - 1386-9477
SP  - 635
EP  - 641
ER  - 
TY  - JOUR
A1  - Maezawa, Koichi
A1  - Förster, Arnold
T1  - Quantum transport devices based on resonant tunneling
JF  - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).
Y1  - 2003
SN  - 3-527-40363-9
SP  - 407
EP  - 424
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Adam, R.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Wu, S.
A1  - Zheng, X.
A1  - Sobolewski, R.
T1  - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
JF  - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8
Y1  - 2005
SN  - 1041-1135
SP  - 1725
EP  - 1727
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Camara, I.
A1  - Hardt, A. van der
A1  - Fox, A.
A1  - Förster, Arnold
A1  - Gusten, R.
A1  - Lüth, H.
A1  - Kordos, P.
T1  - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs
JF  - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald
Y1  - 2004
SN  - 0-7803-8335-7
N1  - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867
SP  - 231
EP  - 234
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  -