TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Schafer, F. A1 - Kordos, P. T1 - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 87 EP - 90 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Resch, U. A1 - Scholz, S. M. T1 - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. Förter ... JF - Applied Surface Science. 63 (1993), H. 1-4 Y1 - 1993 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 106 EP - 110 ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K. A1 - Lange, J. T1 - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11 Y1 - 1996 SN - 1095-3795 SP - 7392 EP - 7402 ER - TY - JOUR A1 - Förster, Arnold A1 - Tulke, A. A1 - Lüth, H. T1 - The Schottky barrier at the InSb(110)–Sn interface JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4 Y1 - 1987 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1054 EP - 1056 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) / JF - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1 Y1 - 1988 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 SP - 95 EP - 97 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes JF - Journal of Physics D: Applied Physics. 27 (1994), H. 1 Y1 - 1994 SN - 0022-3727 N1 - ISSN der E-Ausg.: 1361-6463 SP - 175 EP - 178 ER - TY - JOUR A1 - Förster, Arnold A1 - Spitzer, A. A1 - Lüth, H. T1 - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy JF - Surface Science. 172 (1986), H. 1 Y1 - 1986 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 174 EP - 182 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4 Y1 - 1989 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 720 EP - 724 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Fridrich, I. A1 - Schäpers, T. T1 - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th. JF - Journal of Applied Physics. 85 (1999), H. 12 Y1 - 1999 SN - 1089-7550 SP - 8242 EP - 8246 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. A1 - Uhlisch, D. T1 - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A. JF - Applied Superconductivity. 6 (1999), H. 10-12 Y1 - 1999 SN - 0964-1807 SP - 681 EP - 688 ER - TY - JOUR A1 - Förster, Arnold A1 - Dekorsy, T. A1 - Kim, A. T. M. T1 - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3 Y1 - 1996 SN - 1095-3795 SP - 1531 EP - 1538 ER - TY - JOUR A1 - Srnanek, R. A1 - Geurts, J. A1 - Lentze, M. A1 - Irmer, G. A1 - Donoval, D. A1 - Brdecka, P. A1 - Kordos, P. A1 - Förster, Arnold A1 - Sciana, B. A1 - Radziewicz, D. A1 - Tlaczala, M. T1 - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples JF - Applied surface science . 230 (2004), H. 1 -4 Y1 - 2004 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 379 EP - 385 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. A1 - Pfundstein, P. T1 - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K. JF - Journal of applied physics. 78 (1995), H. 6 Y1 - 1995 SN - 0021-8979 SP - 3824 EP - 3832 ER - TY - JOUR A1 - Rosenauer, A. A1 - Oberst, W. A1 - Litvinov, D. A1 - Gerthsen, D. A1 - Förster, Arnold A1 - Schmidt, R. T1 - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy JF - Physical Review B. 61 (2000), H. 12 Y1 - 2000 SN - 1095-3795 SP - 8276 EP - 8288 ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 357 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Remmele, T. T1 - Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A. Rosenauer ; T. Remmele ; U. Fischer ; A. Förster ... JF - Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7 - 10 April 1997 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 157) Y1 - 1997 SN - 0-7503-0464-2 N1 - MSM <10, 1997, Oxford> ; Conference on Microscopy of Semiconducting Materials <10, 1997, Oxford> ; Institut of Physics SP - 39 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Kohleick, R. T1 - Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ... JF - Physical Review B . 50 (1994), H. 11 Y1 - 1994 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 7833 EP - 7837 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Moers, J. T1 - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ... JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1728 EP - 1735 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1544 EP - 1547 ER -