TY - JOUR A1 - Förster, Arnold A1 - Cambel, V. A1 - Kicin, S. A1 - Kuliffayová, M. T1 - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A. JF - Materials Science and Engineering: C. 19 (2002), H. 2 Y1 - 2002 SN - 0928-4931 SP - 161 EP - 165 ER - TY - JOUR A1 - Förster, Arnold A1 - Stock, J. A1 - Indlekofer, K. M. T1 - Perspectives of resonant tunneling diodes JF - Recent research developments in materials science & engineering/ 1,2 Y1 - 2002 SN - 81-7895-057-X N1 - Nebent.: Materials science & engineering SP - 527 EP - 556 PB - Transworld Research Network CY - Trivandrum, India ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Kiesslich, G. A1 - Wacker, A. A1 - Scholl, E. T1 - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M. JF - Physical Review B. 68 (2003) Y1 - 2003 SN - 1550-235X N1 - 125331 (6 Seiten) ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - Verghese, S. T1 - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A. JF - Applied Physics Letters. 74 (1999), H. 7 Y1 - 1999 SN - 1077-3118 SP - 1039 EP - 1041 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Indlekofer, K.-M. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Glavin, B. A. A1 - Konakova, R. V. T1 - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes JF - Physical Review . B. 61 (2000), H. 16 Y1 - 2000 SN - 1550-235X SP - 10898 EP - 10904 ER - TY - JOUR A1 - Förster, Arnold T1 - Layer Deposition I JF - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34) Y1 - 2003 SN - 3-89336-319-X SP - C2.1 EP - C2.13 PB - Forschungszentrum, Zentralbibliothek CY - Jülich ER - TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Spectral Responsivity of single-quantum-well photodetectors JF - Applied Physics Letters. 77 (2000), H. 1 Y1 - 2000 SN - 1077-3118 SP - 16 EP - 18 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Oberst, W. A1 - Gerthsen, D. T1 - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A. JF - Thin Solid Films. 357 (1999) Y1 - 1999 SN - 0040-6090 SP - 18 EP - 21 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Fridrich, I. A1 - Schäpers, T. T1 - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th. JF - Journal of Applied Physics. 85 (1999), H. 12 Y1 - 1999 SN - 1089-7550 SP - 8242 EP - 8246 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - McIntosh, K. A. T1 - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; Förster, A. JF - Applied Physics Letters. 75 (1999), H. 24 Y1 - 1999 SN - 1077-3118 SP - 3877 EP - 3879 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 6719 EP - 6724 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. A1 - Uhlisch, D. T1 - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th. JF - Journal of Applied Physics. 83 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 8077 EP - 8079 ER - TY - JOUR A1 - Förster, Arnold T1 - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.; Copetti, C. A. ; Förster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H. JF - Journal of Applied Physics. 77 (1995), H. 10 Y1 - 1995 SN - 1089-7550 SP - 5282 EP - 5286 ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Mikulics, M. A1 - Marso, M. A1 - Cámara Mayorga, I. A1 - Gusten, R. A1 - Stancek, S. A1 - Michael, E. A. A1 - Schieder, R. A1 - Wolter, M. A1 - Buca, D. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - Photomixers fabricated on nitrogen-ion-implanted GaAs JF - Applied physics letters. 87 (2005) Y1 - 2005 SP - 041106-1 EP - 041106-3 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Wu, S. A1 - Marso, M. T1 - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R. JF - IEEE Photonics Technology Letters. 18 (2006), H. 7 Y1 - 2006 SP - 820 EP - 822 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Mikulics, V. V. A1 - Adam, R. T1 - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R. JF - Acta physica Polonica / A. 107 (2005), H. 1 Y1 - 2005 SN - 0587-4246 SP - 109 EP - 117 ER - TY - JOUR A1 - Förster, Arnold A1 - Wensorra, J. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Nano Letters. 5 (2005) Y1 - 2005 SN - 0587-4246 SP - 2470 EP - 2475 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER -