TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
T1  - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ...
JF  - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman
Y1  - 1991
SN  - 0-7803-0491-8
N1  - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY>
SP  - 39
EP  - ff.
PB  - Inst. of Electrical and Electronics Engineers
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Bertuccio, G.
A1  - Pullia, A.
T1  - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) /  G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ...
JF  - IEEE transactions on nuclear science. 44 (1997), H. 1
Y1  - 1997
SN  - 0018-9499
SP  - 1
EP  - 5
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Appenzeller, J.
A1  - Schroer, C.
T1  - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15
Y1  - 1996
SN  - 1095-3795
SP  - 9959
EP  - 9963
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Adam, R.
A1  - Mikulics, M.
A1  - Schelten, J.
T1  - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
JF  - Applied Physics Letters. 81 (2002), H. 18
Y1  - 2002
SN  - 1077-3118
SP  - 3485
EP  - 3487
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.;  Copetti, C. A. ; Förster,  A. ; Buchal, Ch. ; Prusseit, W.  ; Kinder, H.
JF  - Journal of Applied Physics. 77 (1995), H. 10
Y1  - 1995
SN  - 1089-7550
SP  - 5282
EP  - 5286
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  -