TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R. C. P. A1 - Tolstikhin, V.I. A1 - Förster, Arnold A1 - Roer, T.G. van de T1 - Vertically integrated transistor-laser structure, take 2 JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece. Y1 - 2000 SN - 0970311109 N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02) PB - Univ. of Michigan CY - Ann Arbor, Mich. ER - TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Spectral Responsivity of single-quantum-well photodetectors JF - Applied Physics Letters. 77 (2000), H. 1 Y1 - 2000 SN - 1077-3118 SP - 16 EP - 18 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Indlekofer, K.-M. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Glavin, B. A. A1 - Konakova, R. V. T1 - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes JF - Physical Review . B. 61 (2000), H. 16 Y1 - 2000 SN - 1550-235X SP - 10898 EP - 10904 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Darmo, J. A1 - Schäffer, F. A1 - Förster, Arnold A1 - Kordos, P. T1 - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range JF - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.] Y1 - 2000 SN - 0780359399 N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia) SP - 147 EP - 150 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Rosenauer, A. A1 - Oberst, W. A1 - Litvinov, D. A1 - Gerthsen, D. A1 - Förster, Arnold A1 - Schmidt, R. T1 - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy JF - Physical Review B. 61 (2000), H. 12 Y1 - 2000 SN - 1095-3795 SP - 8276 EP - 8288 ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Fridrich, I. A1 - Schäpers, T. T1 - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th. JF - Journal of Applied Physics. 85 (1999), H. 12 Y1 - 1999 SN - 1089-7550 SP - 8242 EP - 8246 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - McIntosh, K. A. T1 - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; Förster, A. JF - Applied Physics Letters. 75 (1999), H. 24 Y1 - 1999 SN - 1077-3118 SP - 3877 EP - 3879 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Oberst, W. A1 - Gerthsen, D. T1 - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A. JF - Thin Solid Films. 357 (1999) Y1 - 1999 SN - 0040-6090 SP - 18 EP - 21 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - Verghese, S. T1 - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A. JF - Applied Physics Letters. 74 (1999), H. 7 Y1 - 1999 SN - 1077-3118 SP - 1039 EP - 1041 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Gersdorf, P. A1 - Fox, A. T1 - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P. JF - IEEE Photonics Technology Letters. 11 (1999), H. 1 Y1 - 1999 SN - 1041-1135 SP - 117 EP - 119 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. T1 - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ... JF - Semiconductor Physics, Quantum Electronics & Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1 Y1 - 1999 SN - 1605-6582 SP - 7 EP - 10 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, B. A. T1 - Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ... JF - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz Y1 - 1999 N1 - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5 CY - Warsaw ER -