TY  - JOUR
A1  - Bansal, N. K.
A1  - Müller, C.
A1  - Vieira, M. E.
A1  - Faber, Christian
A1  - Schwarzer, Klemens
T1  - Thermal performance of a rock bed storage system
JF  - Proceedings : University of Stuttgart, Germany, August 28th until September 1st, 2000 / Terrastock 2000, 8th International Conference on Thermal Energy Storage. Ed.: M. Benner ... - Vol. 1
Y1  - 2000
SN  - 3-9805274-1-7
N1  - Terrastock <2000, Stuttgart>  ; Institut für Thermodynamik und Wärmetechnik <Stuttgart>
SP  - 433
EP  - 439
PB  - Inst. für Thermodynamik und Wärmetechnik
CY  - Stuttgart
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4
Y1  - 1989
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 720
EP  - 724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1743
EP  - 1747
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1728
EP  - 1735
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  -