TY - JOUR A1 - Förster, Arnold A1 - Lüth, Hans A1 - Schäpers, Thomas T1 - Die neue Welt JF - Spektrum der Wissenschaft (1999) Y1 - 1999 SN - 0170-2971 SP - 90 EP - 93 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. T1 - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ... JF - Semiconductor Physics, Quantum Electronics & Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1 Y1 - 1999 SN - 1605-6582 SP - 7 EP - 10 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, B. A. T1 - Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ... JF - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz Y1 - 1999 N1 - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5 CY - Warsaw ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. A1 - Uhlisch, D. T1 - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A. JF - Applied Superconductivity. 6 (1999), H. 10-12 Y1 - 1999 SN - 0964-1807 SP - 681 EP - 688 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. A1 - Indlekofer, K. M. T1 - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V. JF - Microelectronic Engineering. 46 (1999), H. 1-4 Y1 - 1999 SN - 0167-9317 N1 - International Conference on Micro- and Nanofabrication SP - 169 EP - 172 ER - TY - JOUR A1 - Förster, Arnold A1 - Janssen, G. A1 - Roer, T. G. van de T1 - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster JF - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource] Y1 - 1999 N1 - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen SP - 219 PB - Technology Foundation, STW CY - Utrecht ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 6719 EP - 6724 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. A1 - Uhlisch, D. T1 - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th. JF - Journal of Applied Physics. 83 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 8077 EP - 8079 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER -