TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
JF  - Nanotechnology. 11 (2000), H. 4
Y1  - 2000
SN  - 1361-6528
SP  - 305
EP  - 308
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Morvic, M.
A1  - Betko, J.
A1  - Novak, J.
T1  - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements.  Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
JF  - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg
Y1  - 1999
SN  - 3-932392-19-1
N1  - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen>
SP  - 79
EP  - 85
PB  - Lehrstuhl für Mikrocharakterisierung
CY  - Erlangen
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
A1  - Uhlisch, D.
T1  - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A.
JF  - Applied Superconductivity. 6 (1999), H. 10-12
Y1  - 1999
SN  - 0964-1807
SP  - 681
EP  - 688
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Indlekofer, K. M.
T1  - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
JF  - Microelectronic Engineering. 46 (1999), H. 1-4
Y1  - 1999
SN  - 0167-9317
N1  - International Conference on Micro- and Nanofabrication
SP  - 169
EP  - 172
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  -