TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Semi-insulating GaAs layers grown by molecular-beam epitaxy /  P. Kordos ; A. Förster ; J. Betko ...
JF  - Applied physics letters. 67 (1995), H. 7
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 983
EP  - 985
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ...
JF  - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)
Y1  - 1995
SN  - 0-7503-0226-7
N1  - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ;  Institute of Physics <London>
SP  - 295
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  -