TY  - JOUR
A1  - Christiaens, P.
A1  - Abouzar, Maryam H.
A1  - Poghossian, Arshak
A1  - Wagner, Torsten
A1  - Bijnens, N.
A1  - Williams, O. A.
A1  - Daenen, M.
A1  - Haenen, K.
A1  - Douthéret, O.
A1  - Haen, J. d´
A1  - Mekhalif, Z.
A1  - Schöning, Michael Josef
A1  - Wagner, P.
T1  - pH sensitivity of nanocrystalline diamond films
JF  - Physica status solidi (A). 204 (2007), H. 9
Y1  - 2007
SN  - 0031-8965
SP  - 2925
EP  - 2930
ER  - 
TY  - JOUR
A1  - Christiaens, P.
A1  - Abouzar, Maryam H.
A1  - Poghossian, Arshak
A1  - Wagner, Torsten
A1  - Bijnens, N.
A1  - Williams, O. A.
A1  - Daenen, M.
A1  - Haenen, K.
A1  - Schöning, Michael Josef
A1  - Wagner, P.
T1  - Nanocrystalline diamond-based field-effect capacitive pH sensor
JF  - Transducers '07 Eurosensors XXI : digest of technical papers ; the14th International Conference on Solid-State Sensors, Actuators and Microsystems, June 10-14, 2007, Lyon, France / Gilles Delapierre (Ed.)
Y1  - 2007
SN  - 1-4244-0841-5
N1  - Eurosensors 21, 2007, Lyon ; International Conference on Solid-State Sensors, Actuators and Microsystems 14, 2007, Lyon
SP  - 1891
EP  - 1894
PB  - IEEE
CY  - Piscataway
ER  - 
TY  - JOUR
A1  - Abouzar, Maryam H.
A1  - Poghossian, Arshak
A1  - Razavi, A.
A1  - Williams, O. A.
A1  - Bijnens, N.
A1  - Wagner, P.
A1  - Schöning, Michael Josef
T1  - Characterisation of capacitive field-effect sensors with a nanocrystalline-diamond film as transducer material for multi-parameter sensing
JF  - Biosensors and Bioelectronics. 24 (2009), H. 5
Y1  - 2009
SN  - 0956-5663
N1  - Selected Papers from the Tenth World Congress on Biosensors Shangai, China, May 14-16, 2008 ; Zeitschrift früher u.d.T. : Biosensors
SP  - 1298
EP  - 1304
PB  - Elsevier
CY  - Amsterdam
ER  - 
TY  - JOUR
A1  - Poghossian, Arshak
A1  - Abouzar, Maryam H.
A1  - Razavi, A.
A1  - Bäcker, Matthias
A1  - Bijnens, N.
A1  - Williams, O. A.
A1  - Haenen, K.
A1  - Moritz, W.
A1  - Wagner, P.
A1  - Schöning, Michael Josef
T1  - Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si–SiO2 structure
JF  - Electrochimica Acta. 54 (2009), H. 25
Y1  - 2009
SN  - 0013-4686
SP  - 5981
EP  - 5985
ER  -