TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
T1  - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
JF  - Applied physics letters. 71 (1997), H. 8
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 1118
EP  - 1120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
JF  - Applied physics letters. 71 (1997), H. 26
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3868
EP  - 3870
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
JF  - Journal of Physics D: Applied Physics. 27 (1994), H. 1
Y1  - 1994
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 175
EP  - 178
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
JF  - Journal of Physics D: Applied Physics. 30 (1997), H. 10
Y1  - 1997
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 1436
EP  - 1441
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
A1  - Lengeler, B.
T1  - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T.  ; Müller, F.  ; Förster, A. ; Lengeler, B. ; Lüth, H.
JF  - Superlattices and microstructures . 14 (1993), H. 1
Y1  - 1993
SN  - 0749-6036
SP  - 57
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
T1  - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
JF  - Surface Science. 305 (1994), H. 1-3
Y1  - 1994
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 460
EP  - 464
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4
Y1  - 1989
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 720
EP  - 724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1743
EP  - 1747
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1728
EP  - 1735
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Spitzer, A.
A1  - Lüth, H.
T1  - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
JF  - Surface Science. 172 (1986), H. 1
Y1  - 1986
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 174
EP  - 182
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
JF  - Surface Science. 189-190 (1987)
Y1  - 1987
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 307
EP  - 314
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäfer, B.-J.
A1  - Londschien, M.
T1  - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ;  A. Förster ; M. Londschien ...
JF  - Surface Science. 204 (1988), H. 3
Y1  - 1988
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 485
EP  - 490
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kicin, S
A1  - Cambel, V.
A1  - Kuliffayova, M.
T1  - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.
JF  - Journal of Applied Physics. 91 (2002), H. 2
Y1  - 2002
SN  - 1089-7550
SP  - 878
EP  - 880
ER  -