TY - JOUR A1 - Miyamoto, Ko-ichiro A1 - Bing, Yu A1 - Wagner, Torsten A1 - Yoshinobu, Tatsuo A1 - Schöning, Michael Josef T1 - Visualization of Defects on a Cultured Cell Layer by Utilizing Chemical Imaging Sensor JF - Procedia Engineering N2 - The chemical imaging sensor is a field-effect sensor which is able to visualize both the distribution of ions (in LAPS mode) and the distribution of impedance (in SPIM mode) inthe sample. In this study, a novel wound-healing assay is proposed, in which the chemical imaging sensor operated in SPIM mode is applied to monitor the defect of a cell layer brought into proximity of the sensing surface.A reduced impedance inside the defect, which was artificially formed ina cell layer, was successfully visualized in a photocurrent image. Y1 - 2015 U6 - https://doi.org/10.1016/j.proeng.2015.08.806 SN - 1877-7058 N1 - Part of special issue "Eurosensors 2015" VL - 120 SP - 936 EP - 939 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Miyamoto, Ko-ichiro A1 - Yu, Bing A1 - Isoda, Hiroko A1 - Wagner, Torsten A1 - Schöning, Michael Josef A1 - Yoshinobu, Tatsuo T1 - Visualization of the recovery process of defects in a cultured cell layer by chemical imaging sensor JF - Sensors and Actuators B: Chemical N2 - The chemical imaging sensor is a field-effect sensor which is able to visualize both the distribution of ions (in LAPS mode) and the distribution of impedance (in SPIM mode) in the sample. In this study, a novel cell assay is proposed, in which the chemical imaging sensor operated in SPIM mode is applied to monitor the recovery of defects in a cell layer brought into proximity of the sensing surface. A reduced impedance at a defect formed artificially in a cell layer was successfully visualized in a photocurrent image. The cell layer was cultured over two weeks, during which the temporal change of the photocurrent distribution corresponding to the recovery of the defect was observed. Y1 - 2016 U6 - https://doi.org/10.1016/j.snb.2016.04.018 SN - 0925-4005 VL - 236 SP - 965 EP - 969 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Windmüller, Anna A1 - Schaps, Kristian A1 - Zantis, Frederik A1 - Domgans, Anna A1 - Taklu, Bereket Woldegbreal A1 - Yang, Tingting A1 - Tsai, Chih-Long A1 - Schierholz, Roland A1 - Yu, Shicheng A1 - Kungl, Hans A1 - Tempel, Hermann A1 - Dunin-Borkowski, Rafal E. A1 - Hüning, Felix A1 - Hwang, Bing Joe A1 - Eichel, Rüdiger-A. T1 - Electrochemical activation of LiGaO2: implications for ga-doped garnet solid electrolytes in li-metal batteries JF - ACS Applied Materials & Interfaces N2 - Ga-doped Li7La3Zr2O12 garnet solid electrolytes exhibit the highest Li-ion conductivities among the oxide-type garnet-structured solid electrolytes, but instabilities toward Li metal hamper their practical application. The instabilities have been assigned to direct chemical reactions between LiGaO2 coexisting phases and Li metal by several groups previously. Yet, the understanding of the role of LiGaO2 in the electrochemical cell and its electrochemical properties is still lacking. Here, we are investigating the electrochemical properties of LiGaO2 through electrochemical tests in galvanostatic cells versus Li metal and complementary ex situ studies via confocal Raman microscopy, quantitative phase analysis based on powder X-ray diffraction, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and electron energy loss spectroscopy. The results demonstrate considerable and surprising electrochemical activity, with high reversibility. A three-stage reaction mechanism is derived, including reversible electrochemical reactions that lead to the formation of highly electronically conducting products. The results have considerable implications for the use of Ga-doped Li7La3Zr2O12 electrolytes in all-solid-state Li-metal battery applications and raise the need for advanced materials engineering to realize Ga-doped Li7La3Zr2O12for practical use. KW - LiGaO2 KW - garnet solid electrolyte KW - ga-doping KW - Li7La3Zr2O12 KW - solid-state battery Y1 - 2024 U6 - https://doi.org/10.1021/acsami.4c03729 SN - 39181–3919 VL - 16 IS - 30 PB - ACS Publications CY - Washington, DC ER -