TY - CHAP A1 - Förster, Arnold A1 - Stock, Jürgen A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry N2 - GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW. KW - Biosensor KW - Gunn diode KW - microwave generation KW - GaAs hot electron injector Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:hbz:a96-opus-1462 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER - TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Spectral Responsivity of single-quantum-well photodetectors JF - Applied Physics Letters. 77 (2000), H. 1 Y1 - 2000 SN - 1077-3118 SP - 16 EP - 18 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Oberst, W. A1 - Gerthsen, D. T1 - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A. JF - Thin Solid Films. 357 (1999) Y1 - 1999 SN - 0040-6090 SP - 18 EP - 21 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - Verghese, S. T1 - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A. JF - Applied Physics Letters. 74 (1999), H. 7 Y1 - 1999 SN - 1077-3118 SP - 1039 EP - 1041 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Indlekofer, K.-M. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Glavin, B. A. A1 - Konakova, R. V. T1 - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes JF - Physical Review . B. 61 (2000), H. 16 Y1 - 2000 SN - 1550-235X SP - 10898 EP - 10904 ER - TY - JOUR A1 - Förster, Arnold T1 - Layer Deposition I JF - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34) Y1 - 2003 SN - 3-89336-319-X SP - C2.1 EP - C2.13 PB - Forschungszentrum, Zentralbibliothek CY - Jülich ER - TY - JOUR A1 - Förster, Arnold A1 - Kiesslich, G. A1 - Wacker, A. A1 - Scholl, E. T1 - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M. JF - Physical Review B. 68 (2003) Y1 - 2003 SN - 1550-235X N1 - 125331 (6 Seiten) ER - TY - JOUR A1 - Förster, Arnold A1 - Stock, J. A1 - Indlekofer, K. M. T1 - Perspectives of resonant tunneling diodes JF - Recent research developments in materials science & engineering/ 1,2 Y1 - 2002 SN - 81-7895-057-X N1 - Nebent.: Materials science & engineering SP - 527 EP - 556 PB - Transworld Research Network CY - Trivandrum, India ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Mikulics, V. V. A1 - Adam, R. T1 - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R. JF - Acta physica Polonica / A. 107 (2005), H. 1 Y1 - 2005 SN - 0587-4246 SP - 109 EP - 117 ER - TY - JOUR A1 - Förster, Arnold A1 - Wensorra, J. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Nano Letters. 5 (2005) Y1 - 2005 SN - 0587-4246 SP - 2470 EP - 2475 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Mikulics, M. A1 - Marso, M. A1 - Cámara Mayorga, I. A1 - Gusten, R. A1 - Stancek, S. A1 - Michael, E. A. A1 - Schieder, R. A1 - Wolter, M. A1 - Buca, D. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - Photomixers fabricated on nitrogen-ion-implanted GaAs JF - Applied physics letters. 87 (2005) Y1 - 2005 SP - 041106-1 EP - 041106-3 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, M. A1 - Lüth, H. T1 - Transport through a buried double barrier single electron transistor at low temperatures JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 502 EP - 506 ER - TY - JOUR A1 - Förster, Arnold A1 - Malzer, S. A1 - Heber, J. A1 - Peter, M. T1 - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H. JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 349 EP - 352 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A. JF - Ultramicroscopy. 72 (1998), H. 3-4 Y1 - 1998 SN - 0304-3991 SP - 121 EP - 133 ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes : the effect of structural properties on their performance JF - Festkörperprobleme = Advances in solid state physics. 33 (1994) Y1 - 1994 SN - 0065-3357 N1 - Review ; 2. ISSN: 0430-3393 SP - 37 EP - 62 ER - TY - JOUR A1 - Förster, Arnold A1 - Döhler, G. H A1 - Heber, J. T1 - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ... JF - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5) Y1 - 1998 SN - 0-19-850058-0 SP - 478 EP - 504 PB - Clarendon Press CY - Oxford ER - TY - JOUR A1 - Maezawa, Koichi A1 - Förster, Arnold T1 - Quantum transport devices based on resonant tunneling JF - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.). Y1 - 2003 SN - 3-527-40363-9 SP - 407 EP - 424 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Zatko, B. A1 - Dubecký, F. A1 - Bohacek, P. A1 - Gombia, E. A1 - Frigeri, P. A1 - Mosca, R. A1 - Franchi, S. A1 - Huarn, J. A1 - Nescas, V. A1 - Sekacova, M. A1 - Förster, Arnold A1 - Kordos, P. T1 - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs JF - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2 Y1 - 2004 SN - 0168-9002 SP - 111 EP - 120 ER - TY - JOUR A1 - Srnanek, R. A1 - Geurts, J. A1 - Lentze, M. A1 - Irmer, G. A1 - Donoval, D. A1 - Brdecka, P. A1 - Kordos, P. A1 - Förster, Arnold A1 - Sciana, B. A1 - Radziewicz, D. A1 - Tlaczala, M. T1 - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples JF - Applied surface science . 230 (2004), H. 1 -4 Y1 - 2004 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 379 EP - 385 ER - TY - JOUR A1 - Mikulics, M. A1 - Adam, R. A1 - Kordos, P. A1 - Förster, Arnold A1 - Lüth, H. A1 - Wu, S. A1 - Zheng, X. A1 - Sobolewski, R. T1 - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates JF - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8 Y1 - 2005 SN - 1041-1135 SP - 1725 EP - 1727 ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - BOOK A1 - Förster, Arnold T1 - Anwendung der hochauflösenden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage Jülich / Kernforschungsanlage ; 2247) Y1 - 1988 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 1988 PB - Zentralbibliothek der Kernforschungsanlage CY - Jülich ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. A1 - Konakova, R. V. A1 - Sheka, D. I. T1 - Resonant spectroscopy of electric-field-induced superlattices JF - Journal of Applied Physics. 90 (2001), H. 6 Y1 - 2001 SN - 1089-7550 U6 - https://doi.org/10.1063/1.1392956 SP - 2857 EP - 2861 ER - TY - JOUR A1 - Stock, J. A1 - Malindretos, J. A1 - Indlekofer, K.M. A1 - Pöttgens, Michael A1 - Förster, Arnold A1 - Lüth, Hans T1 - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits JF - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6 Y1 - 2001 SN - 0018-9383 SP - 1028 EP - 1032 ER - TY - JOUR A1 - Hodel, U. A1 - Orzati, A. A1 - Marso, M. A1 - Homann, O. A1 - Fox, A. A1 - Hart, A. v. d. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver JF - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials Y1 - 2000 SN - 0-7803-6320-5 N1 - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.> SP - 466 EP - 469 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R. C. P. A1 - Tolstikhin, V.I. A1 - Förster, Arnold A1 - Roer, T.G. van de T1 - Vertically integrated transistor-laser structure, take 2 JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece. Y1 - 2000 SN - 0970311109 N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02) PB - Univ. of Michigan CY - Ann Arbor, Mich. ER - TY - JOUR A1 - Darmo, J. A1 - Schäffer, F. A1 - Förster, Arnold A1 - Kordos, P. T1 - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range JF - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.] Y1 - 2000 SN - 0780359399 N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia) SP - 147 EP - 150 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. A1 - Rüders, F. T1 - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., Förster, A.; Marso, M.; Rüders, F. JF - Electronics Letters. 34 (1998), H. 1 Y1 - 1998 SN - 1350-911X SP - 119 EP - 120 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Bertuccio, G. A1 - Pullia, A. T1 - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ... JF - IEEE transactions on nuclear science. 44 (1997), H. 1 Y1 - 1997 SN - 0018-9499 SP - 1 EP - 5 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. T1 - On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster JF - Physica status solidi / B, Basic research. 205 (1998), H. 1 Y1 - 1998 SN - 1521-3951 SP - 125 EP - 128 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dieker, C. A1 - Gerthsen, D. T1 - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 253 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Walther, T. A1 - Gerthsen, D. A1 - Carius, Reinhard A1 - Förster, Arnold T1 - AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 449 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 195 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1 Y1 - 1996 SN - 0-7803-3180-X N1 - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898 SP - 579 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER -