TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
T1  - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21
Y1  - 1997
SN  - 1095-3795
SP  - 14108
EP  - 14115
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12
Y1  - 1998
SN  - 1095-3795
SP  - 7864
EP  - 7871
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Bauser, E.
T1  - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ...
JF  - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3
Y1  - 1995
SN  - 0920-5632
SP  - 381
EP  - 385
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Protic, D.
A1  - Lüth, H.
T1  - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ;  D. Protic ; A. Förster ; H. Lüth
JF  - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3
Y1  - 1995
SN  - 0168-9002
SP  - 324
EP  - 329
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novák, J.
A1  - Morvic, M.
T1  - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ;  J. Betko ; A. Förster ...
JF  - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1
Y1  - 1996
SN  - 0921-5107
SP  - 58
EP  - 62
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Leuther, A.
A1  - Lüth, H.
T1  - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ...
JF  - Semiconductor science and technology. 11 (1996), H. 5
Y1  - 1996
SN  - 1361-6641
SP  - 766
EP  - 771
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
JF  - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1
Y1  - 1988
SN  - 0947-8396
N1  - ISSN der E-Ausg.: 1432-0630
SP  - 95
EP  - 97
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lentzen, M.
A1  - Gerthsen, D.
T1  - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
JF  - Applied physics letters. 60 (1992), H. 1
Y1  - 1992
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 74
EP  - 76
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Krüger, M.
A1  - Appenzeller, J.
T1  - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
JF  - Applied physics letters. 66 (1995), H. 26
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3603
EP  - 3606
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Semi-insulating GaAs layers grown by molecular-beam epitaxy /  P. Kordos ; A. Förster ; J. Betko ...
JF  - Applied physics letters. 67 (1995), H. 7
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 983
EP  - 985
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Haug, R. J.
T1  - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Applied physics letters. 68 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 838
EP  - 840
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zettler, J.-T.
A1  - Mikkelsen, H.
A1  - Leo, K.
T1  - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
JF  - Physical Review B . 46 (1992), H. 24
Y1  - 1992
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15955
EP  - 15962
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lohe, C.
A1  - Leuther, A.
T1  - Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
JF  - Physical Review B . 47 (1993), H. 7
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 3819
EP  - 3826
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kohleick, R.
A1  - Lüth, H.
T1  - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure  / R. Kohleick ; A. Förster ; H. Lüth
JF  - Physical Review B . 48 (1993), H. 20
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15138
EP  - 15143
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Kohleick, R.
T1  - Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ...
JF  - Physical Review B . 50 (1994), H. 11
Y1  - 1994
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 7833
EP  - 7837
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Müller, F.
A1  - Lengeler, B.
A1  - Schäpers, T.
T1  - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5099
EP  - 5105
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Blick, R. H.
T1  - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5570
EP  - 5573
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
T1  - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
JF  - Applied physics letters. 71 (1997), H. 8
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 1118
EP  - 1120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
JF  - Applied physics letters. 71 (1997), H. 26
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3868
EP  - 3870
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
JF  - Journal of Physics D: Applied Physics. 27 (1994), H. 1
Y1  - 1994
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 175
EP  - 178
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
JF  - Journal of Physics D: Applied Physics. 30 (1997), H. 10
Y1  - 1997
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 1436
EP  - 1441
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
A1  - Lengeler, B.
T1  - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T.  ; Müller, F.  ; Förster, A. ; Lengeler, B. ; Lüth, H.
JF  - Superlattices and microstructures . 14 (1993), H. 1
Y1  - 1993
SN  - 0749-6036
SP  - 57
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
T1  - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
JF  - Surface Science. 305 (1994), H. 1-3
Y1  - 1994
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 460
EP  - 464
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tulke, A.
A1  - Lüth, H.
T1  - The Schottky barrier at the InSb(110)–Sn interface
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4
Y1  - 1987
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1054
EP  - 1056
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4
Y1  - 1989
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 720
EP  - 724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1743
EP  - 1747
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1728
EP  - 1735
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Spitzer, A.
A1  - Lüth, H.
T1  - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
JF  - Surface Science. 172 (1986), H. 1
Y1  - 1986
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 174
EP  - 182
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
JF  - Surface Science. 189-190 (1987)
Y1  - 1987
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 307
EP  - 314
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäfer, B.-J.
A1  - Londschien, M.
T1  - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ;  A. Förster ; M. Londschien ...
JF  - Surface Science. 204 (1988), H. 3
Y1  - 1988
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 485
EP  - 490
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kicin, S
A1  - Cambel, V.
A1  - Kuliffayova, M.
T1  - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.
JF  - Journal of Applied Physics. 91 (2002), H. 2
Y1  - 2002
SN  - 1089-7550
SP  - 878
EP  - 880
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Cambel, V.
A1  - Kicin, S.
A1  - Kuliffayová, M.
T1  - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A.
JF  - Materials Science and Engineering: C. 19 (2002), H. 2
Y1  - 2002
SN  - 0928-4931
SP  - 161
EP  - 165
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malindretos, Jörg
A1  - Indlekofer, Klaus Michael
A1  - Lepsa, Mihail Ion
T1  - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans
JF  - Superlattices and Microstructures. 31 (2002), H. 6
Y1  - 2002
SN  - 0749-6036
SP  - 315
EP  - 325
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Schafer, F.
A1  - Kordos, P.
T1  - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 87
EP  - 90
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Siebe, F.
A1  - Fox, A.
T1  - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 129
EP  - 132
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Sheka, D. I.
T1  - Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R.
JF  - Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: Günther Bauer ...
Y1  - 2002
N1  - International  Conference  on Modulated Semiconductor Structures ; (10, 2001, Linz). Zugleich: Physica E: Low-dimensional Systems and Nanostructures. 13(2002)2-4. ISSN 1386-9477
SP  - 811
EP  - 813
PB  - Elsevier
CY  - Amsterdam [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Adam, R.
A1  - Mikulics, M.
A1  - Schelten, J.
T1  - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
JF  - Applied Physics Letters. 81 (2002), H. 18
Y1  - 2002
SN  - 1077-3118
SP  - 3485
EP  - 3487
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Adam, R.
T1  - Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; Förster, A.; Kordos, P.; Xu, Y.; Sobolewski, R.
JF  - 2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society
Y1  - 2001
SN  - 078037049X
N1  - IEEE catalog number: 01TH8567
SP  - 155
EP  - 155
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Krafft, B.
A1  - Förster, Arnold
A1  - Hart, A. van der
A1  - Schäpers, T.
T1  - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
JF  - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4
Y1  - 2001
SN  - 1386-9477
SP  - 635
EP  - 641
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Gersdorf, P.
A1  - Fox, A.
T1  - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
JF  - IEEE Photonics Technology Letters. 11 (1999), H. 1
Y1  - 1999
SN  - 1041-1135
SP  - 117
EP  - 119
ER  - 
TY  - JOUR
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Litvinov, D.
A1  - Gerthsen, D.
A1  - Förster, Arnold
A1  - Schmidt, R.
T1  - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF  - Physical Review B. 61 (2000), H. 12
Y1  - 2000
SN  - 1095-3795
SP  - 8276
EP  - 8288
ER  -