TY  - CHAP
A1  - Förster, Arnold
A1  - Stock, Jürgen
A1  - Montanari, Simone
A1  - Lepsa, Mihail Ion
A1  - Lüth, Hans
T1  - Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry
N2  - GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.
KW  - Biosensor
KW  - Gunn diode
KW  - microwave generation
KW  - GaAs hot electron injector
Y1  - 2006
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:hbz:a96-opus-1462
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
JF  - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]
Y1  - 1996
SN  - 0-7803-3095-1
N1  - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881
SP  - 67
EP  - ff.
CY  - Piscataway, NJ [u.a.]
ER  - 
TY  - JOUR
A1  - Tillmann, K.
A1  - Förster, Arnold
T1  - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
JF  - Thin Solid Films. 368 (2000), H. 1
Y1  - 2000
SN  - 0040-6090
SP  - 93
EP  - 104
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Spectral Responsivity of single-quantum-well photodetectors
JF  - Applied Physics Letters. 77 (2000), H. 1
Y1  - 2000
SN  - 1077-3118
SP  - 16
EP  - 18
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Gerthsen, D.
T1  - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
JF  - Thin Solid Films. 357 (1999)
Y1  - 1999
SN  - 0040-6090
SP  - 18
EP  - 21
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - Verghese, S.
T1  - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
JF  - Applied Physics Letters. 74 (1999), H. 7
Y1  - 1999
SN  - 1077-3118
SP  - 1039
EP  - 1041
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Indlekofer, K.-M.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Glavin, B. A.
A1  - Konakova, R. V.
T1  - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
JF  - Physical  Review . B. 61 (2000), H. 16
Y1  - 2000
SN  - 1550-235X
SP  - 10898
EP  - 10904
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kiesslich, G.
A1  - Wacker, A.
A1  - Scholl, E.
T1  - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
JF  - Physical Review B. 68 (2003)
Y1  - 2003
SN  - 1550-235X
N1  - 125331 (6 Seiten)
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Stock, J.
A1  - Indlekofer, K. M.
T1  - Perspectives of resonant tunneling diodes
JF  - Recent research developments in materials science & engineering/ 1,2
Y1  - 2002
SN  - 81-7895-057-X
N1  - Nebent.: Materials science & engineering
SP  - 527
EP  - 556
PB  - Transworld Research Network
CY  - Trivandrum, India
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Physica B: Condensed Matter. 314 (2002), H. 1-4
Y1  - 2002
SN  - 0921-4526
SP  - 499
EP  - 502
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Mikulics, V. V.
A1  - Adam, R.
T1  - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R.
JF  - Acta physica Polonica / A. 107 (2005), H. 1
Y1  - 2005
SN  - 0587-4246
SP  - 109
EP  - 117
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Wensorra, J.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
JF  - Nano Letters. 5 (2005)
Y1  - 2005
SN  - 0587-4246
SP  - 2470
EP  - 2475
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Montanari, Simone
A1  - Lepsa, Mihail Ion
A1  - Lüth, Hans
T1  - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth
JF  - Solid-state electronics. 49 (2005), H. 2
Y1  - 2005
SN  - 0038-1101
SP  - 245
EP  - 250
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Cámara Mayorga, I.
A1  - Gusten, R.
A1  - Stancek, S.
A1  - Michael, E. A.
A1  - Schieder, R.
A1  - Wolter, M.
A1  - Buca, D.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Photomixers fabricated on nitrogen-ion-implanted GaAs
JF  - Applied physics letters. 87 (2005)
Y1  - 2005
SP  - 041106-1
EP  - 041106-3
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.;  Gerthsen D.;  Förster A.
JF  - Ultramicroscopy. 72 (1998), H. 3-4
Y1  - 1998
SN  - 0304-3991
SP  - 121
EP  - 133
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Resonant tunneling diodes : the effect of structural properties on their performance
JF  - Festkörperprobleme = Advances in solid state physics. 33 (1994)
Y1  - 1994
SN  - 0065-3357
N1  - Review ; 2. ISSN: 0430-3393
SP  - 37
EP  - 62
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Döhler, G. H
A1  - Heber, J.
T1  - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ...
JF  - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)
Y1  - 1998
SN  - 0-19-850058-0
SP  - 478
EP  - 504
PB  - Clarendon Press
CY  - Oxford
ER  -