TY - JOUR A1 - Maezawa, Koichi A1 - Förster, Arnold T1 - Quantum transport devices based on resonant tunneling JF - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.). Y1 - 2003 SN - 3-527-40363-9 SP - 407 EP - 424 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Zatko, B. A1 - Dubecký, F. A1 - Bohacek, P. A1 - Gombia, E. A1 - Frigeri, P. A1 - Mosca, R. A1 - Franchi, S. A1 - Huarn, J. A1 - Nescas, V. A1 - Sekacova, M. A1 - Förster, Arnold A1 - Kordos, P. T1 - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs JF - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2 Y1 - 2004 SN - 0168-9002 SP - 111 EP - 120 ER - TY - JOUR A1 - Srnanek, R. A1 - Geurts, J. A1 - Lentze, M. A1 - Irmer, G. A1 - Donoval, D. A1 - Brdecka, P. A1 - Kordos, P. A1 - Förster, Arnold A1 - Sciana, B. A1 - Radziewicz, D. A1 - Tlaczala, M. T1 - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples JF - Applied surface science . 230 (2004), H. 1 -4 Y1 - 2004 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 379 EP - 385 ER - TY - JOUR A1 - Mikulics, M. A1 - Adam, R. A1 - Kordos, P. A1 - Förster, Arnold A1 - Lüth, H. A1 - Wu, S. A1 - Zheng, X. A1 - Sobolewski, R. T1 - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates JF - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8 Y1 - 2005 SN - 1041-1135 SP - 1725 EP - 1727 ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - BOOK A1 - Förster, Arnold T1 - Anwendung der hochauflösenden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage Jülich / Kernforschungsanlage ; 2247) Y1 - 1988 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 1988 PB - Zentralbibliothek der Kernforschungsanlage CY - Jülich ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. A1 - Konakova, R. V. A1 - Sheka, D. I. T1 - Resonant spectroscopy of electric-field-induced superlattices JF - Journal of Applied Physics. 90 (2001), H. 6 Y1 - 2001 SN - 1089-7550 U6 - https://doi.org/10.1063/1.1392956 SP - 2857 EP - 2861 ER - TY - JOUR A1 - Stock, J. A1 - Malindretos, J. A1 - Indlekofer, K.M. A1 - Pöttgens, Michael A1 - Förster, Arnold A1 - Lüth, Hans T1 - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits JF - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6 Y1 - 2001 SN - 0018-9383 SP - 1028 EP - 1032 ER - TY - JOUR A1 - Hodel, U. A1 - Orzati, A. A1 - Marso, M. A1 - Homann, O. A1 - Fox, A. A1 - Hart, A. v. d. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver JF - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials Y1 - 2000 SN - 0-7803-6320-5 N1 - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.> SP - 466 EP - 469 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R. C. P. A1 - Tolstikhin, V.I. A1 - Förster, Arnold A1 - Roer, T.G. van de T1 - Vertically integrated transistor-laser structure, take 2 JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece. Y1 - 2000 SN - 0970311109 N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02) PB - Univ. of Michigan CY - Ann Arbor, Mich. ER - TY - JOUR A1 - Darmo, J. A1 - Schäffer, F. A1 - Förster, Arnold A1 - Kordos, P. T1 - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range JF - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.] Y1 - 2000 SN - 0780359399 N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia) SP - 147 EP - 150 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. A1 - Rüders, F. T1 - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., Förster, A.; Marso, M.; Rüders, F. JF - Electronics Letters. 34 (1998), H. 1 Y1 - 1998 SN - 1350-911X SP - 119 EP - 120 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Bertuccio, G. A1 - Pullia, A. T1 - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ... JF - IEEE transactions on nuclear science. 44 (1997), H. 1 Y1 - 1997 SN - 0018-9499 SP - 1 EP - 5 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. T1 - On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster JF - Physica status solidi / B, Basic research. 205 (1998), H. 1 Y1 - 1998 SN - 1521-3951 SP - 125 EP - 128 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dieker, C. A1 - Gerthsen, D. T1 - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 253 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Walther, T. A1 - Gerthsen, D. A1 - Carius, Reinhard A1 - Förster, Arnold T1 - AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 449 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 195 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1 Y1 - 1996 SN - 0-7803-3180-X N1 - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898 SP - 579 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 357 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, T. H. T1 - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H. JF - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4 Y1 - 1995 SN - 0168-583X SP - 333 EP - 336 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Remmele, T. T1 - Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A. Rosenauer ; T. Remmele ; U. Fischer ; A. Förster ... JF - Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7 - 10 April 1997 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 157) Y1 - 1997 SN - 0-7503-0464-2 N1 - MSM <10, 1997, Oxford> ; Conference on Microscopy of Semiconducting Materials <10, 1997, Oxford> ; Institut of Physics SP - 39 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3 Y1 - 1996 SN - 981-02-2947-X N1 - International Conference on the Physics of Semiconductors <23, 1996, Berlin> SP - 2251 EP - ff. PB - World Scientific CY - Singapore [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Ruders, F. T1 - Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster JF - Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish Y1 - 1997 SN - 0-7803-3374-8 N1 - Conference on Optoelectronic and Microelectronic Materials and Devices <1996, Canberra> ; IEEE catalog number: 96TH8197 SP - 71 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - Europhysics letters. 36 (1996), H. 1 Y1 - 1996 SN - 1286-4854 SP - 61 EP - 66 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Thust, M. T1 - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ... JF - Philosophical magazine / Letters. 74 (1996), H. 5 Y1 - 1996 SN - 1362-3036 SP - 309 EP - 315 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2 Y1 - 1996 SN - 0018-9499 SP - 1446 EP - 1451 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Novel hybrid Nb/InAs/Nb step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Czechoslovak journal of physics . 46 (1996), H. S2 Y1 - 1996 SN - 0011-4626 SP - 659 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1544 EP - 1547 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1540 EP - 1543 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Remmele, T. T1 - Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images / A. Rosenauer ; T. Remmele ; D. Gerthsen ... A. Förster JF - Optik : international journal for light and electron optics. 105 (1997), H. 3 Y1 - 1997 SN - 0030-4026 SP - 99 EP - 107 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Properties of Nb/InAs/Nb hybrid step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Journal of low temperature physics. 106 (1997), H. 3-4 Y1 - 1997 SN - 0022-2291 N1 - ISSN der E-Ausg.: 1573-7357 SP - 321 EP - 326 ER - TY - JOUR A1 - Ungermanns, C. A1 - Ahe, M. v. d. A1 - Carius, Reinhard A1 - Förster, Arnold T1 - Optimization of III/V binary growth with RHEED in MOMBE / C. Ungermanns ; M. v. d. Ahe ; R. Carius ; A. Förster ... JF - Fresenius' Journal of Analytical Chemistry. 358 (1997), H. 1-2 Y1 - 1997 SN - 0937-0633 N1 - ISSN der E-Ausg.: 1432-1130 SP - 101 EP - 104 ER - TY - JOUR A1 - Förster, Arnold A1 - Janssen, G. A1 - Roer, T. G. van de T1 - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster JF - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource] Y1 - 1999 N1 - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen SP - 219 PB - Technology Foundation, STW CY - Utrecht ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Bäcker, Matthias A1 - Raue, Markus A1 - Schusser, Sebastian A1 - Jeitner, C. A1 - Breuer, L. A1 - Wagner, P. A1 - Poghossian, Arshak A1 - Förster, Arnold A1 - Mang, Thomas A1 - Schöning, Michael Josef T1 - Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films JF - Physica Status Solidi (a) N2 - Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3–12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off. Y1 - 2012 U6 - https://doi.org/10.1002/pssa.201100763 SN - 1862-6319 VL - 209 IS - 5 SP - 839 EP - 845 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Wu, S. A1 - Marso, M. T1 - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R. JF - IEEE Photonics Technology Letters. 18 (2006), H. 7 Y1 - 2006 SP - 820 EP - 822 ER - TY - JOUR A1 - Förster, Arnold T1 - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.; Copetti, C. A. ; Förster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H. JF - Journal of Applied Physics. 77 (1995), H. 10 Y1 - 1995 SN - 1089-7550 SP - 5282 EP - 5286 ER -