TY - JOUR
A1 - Breitschuh, S.
A1 - Graber, S.
A1 - Hagemann, Hans-Jürgen
A1 - Hemdt, A. vom
A1 - Schmitz, Günter
T1 - Telematiklabore mit LabVIEW in der Ingenieurausbildung
JF - Virtuelle Instrumente in der Praxis : Messtechnik, Automatisierung ; Begleitband zum Kongress VIP 2003 / Rahman Jamal ; Hans Jaschinski (Hrsg.).
Y1 - 2003
SN - 3-7785-2908-0
N1 - VIP <2003, München>
SP - 458
EP - 464
PB - Hüthig
CY - Heidelberg [u.a.]
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - INGMEDIA - Lernsoftware für technische und physikalische Praktika in Ingenieurstudiengängen
JF - E-Learning : Tagungsband ; NMB-Projekte in den Ingenieurwissenschaften ; Workshop der ingenieurwissenschaftlichen Projekte im bmb+f-Förderprogramm "Neue Medien in der Bildung" am 25. und 26. Juni 2003 an der Hochschule Anhalt in Dessau / Hrsg.: Stephan Pi
Y1 - 2003
N1 - Workshop E-Learning: NMB-Projekte in den Ingenieurwissenschaften <2003, Dessau>
SP - 64
EP - 69
PB - Hochschule Anhalt
CY - Dessau
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - INGMEDIA - E-Learning für Laborpraktika
JF - Evaluation von E-Learning : Zielrichtungen, methodologische Aspekte, Zukunftsperspektiven / Dorothee M. Meister ... (Hrsg.)
Y1 - 2004
SN - 3-8309-1311-7
N1 - Medien in der Wissenschaft ; 25
SP - 217
EP - 222
PB - Waxmann
CY - Münster [u.a.]
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Breitschuh, S.
A1 - Graber, S.
A1 - Schmitz, Günter
T1 - Internet Laboratory Courses with Remote Access and Control of Real Measurements on Sensors and Electronic Components
JF - Mechatronics & Robotics 2004 : Aachen, Germany, September 13 - 15, 2004 / [APS - European Centre for Mechatronics]. P. Drews (ed.)
Y1 - 2004
SN - 3-938153-30-X
N1 - MechRob <2004, Aachen>
SP - 1280
EP - 1284
PB - Eysoldt
CY - Aachen
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Bachmann, P. K.
A1 - Lade, H.
A1 - Leers, D.
T1 - Thermal properties of C/H-, C/H/O-, C/H/N- and C/H/X-grown polycrystalline CVD diamond. P. K. Bachmann, H. J. Hagemann, H. Lade, ...
JF - Diamond and Related Material. Vol 4. (1995), H. Issue 5-6
Y1 - 1995
N1 - abstract online:
SP - 820
EP - 826
PB - Elsevier Science
CY - New York, NY [u.a.]
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Backhaus, U.
A1 - Goessner, S.
T1 - Collaborative eLearning Concepts for University Level Online Laboratory Courses in Engineering. U. Backhaus, S. Goessner, H. J. Hagemann
JF - Proceedings Online Educa Berlin: 8th International Conference on Technology Supported Learning & Training. 2002
Y1 - 2002
N1 - Online Educa <2002, Berlin>
SP - 62
EP - 66
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Bachmann, P.K.
A1 - Lade, H.
A1 - Leers, D.
T1 - CVD Diamond Growth: Gas Compositions and Film Properties / P.K. Bachmann, H.J. Hagemann, H. Lade, D. Leers, D.U. Wiechert and H. Wilson
JF - Advanced materials '94 : proceedings of the NIRIM International Symposium on Advanced Materials '94, Tsukuba, Japan, March 13 - 17, 1994 / National Institute for Research in Inorganic Materials. Ed. by M. Kamo ...
Y1 - 1994
N1 - NIRIM International Symposium on Advanced Materials ; 1994 (Tsukuba) : 1994.03.13-17
SP - 115
EP - 120
PB - International Communications Specialists
CY - Tokyo
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Bachmann, P.K.
A1 - Lade, H.
A1 - Leers, D.
T1 - Diamond chemical vapor deposition: gas compositions and film properties / Bachmann, P.K.; Hagemann, H.-J.; Lade, H; Leers, D.; Picht, F.; Wiechert, D.U.; Wilson, H.
JF - Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ...
Y1 - 1994
SN - 1-55899-239-1
N1 - Materials Research Society symposium proceedings ; 339
SP - 267
EP - 277
CY - Pittsburgh, Penn.
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Cassidy, Wiliam D.
T1 - Diamond growth rates and quality: dependence on gas phase cpmposition / William D. Cassidy [...], Hans-Jurgen Hagemann
JF - Diamond, SiC and nitride wide bandgap semiconductors : symposium held April 4 - 8, 1994, San Francisco, California, U.S.A. / ed.: Calvin H. Carter, Jr. ....
Y1 - 1994
SN - 1-55899-239-1
N1 - Materials Research Society symposium proceedings ; 339
SP - 285
EP - 291
CY - Pittsburgh, Penn. ,
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Gudat, W.
A1 - Kunz, C.
T1 - Photoabsorption of alloys of Al with transition metals V, Fe, Ni and Cu and Pr near the Al L₂,₃-edge
JF - Solid State Communications
N2 - The onset of Al 2p transitions of VAl₃, FeAl, NiAl, NiAl₃, CuAl₂, PrAl₂ and the disordered alloys V-Al (16 at % Al, 28%, 41%), Fe-Al (11%) is shifted up to 1.1 eV. New pronounced structure develops close to the onset which for NiAl agrees with a density of states calculation by Connolly and Johnson.
Y1 - 1974
SN - 0038-1098
U6 - https://doi.org/10.1016/0038-1098(74)91165-X
VL - 15
IS - 3
SP - 655
EP - 658
PB - Elsevier
CY - Amsterdam
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Gudat, W.
A1 - Kunz, C.
T1 - Optical constants from the far infrared to the X-ray region: Mg, Al, Cu, Ag, Au, Bi, C, and Al₂O₃
JF - Journal of the Optical Society of America (JOSA)
Y1 - 1975
SN - 0030-3941
U6 - https://doi.org/10.1364/JOSA.65.000742
VL - 65
IS - 6
SP - 742
EP - 744
PB - Optical Society of America
CY - New York
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Gudat, W.
A1 - Kunz, C.
T1 - Photoabsorption coefficient of alloys of Al with transition metals V, Fe, Ni and Cu and Pr from 30 to 150 eV photon energy
JF - Physica status solidi b
N2 - The absorption coefficient of VAI3, FeAI, NiAI, NiAl2, CuAI2, PrAl2, and of disordered V–AI (16 at% AI, 28%, 41%) and Fe–AI (11%) alloys has been measured in the region of the M₂,₃ absorption of the transition metals and the Labsorption of AI. The strong changes of the AI spectrum in the region of the 100 eV maximum upon alloying are explained as another evidence of the EXAFS (extended X-ray absorption fine structure) nature of these structures. The broad, prominent absorption peaks from the 3p excitations in V and Fe and from the 4d excitations in Pr are influenced only little on allyoing and thus appear to be of atomic origin. The fine structure at the onset of the Pr 4d transitions is identical in the metal and the alloy but differs from that of Pr oxide. The only M₂,₃ edge which is detectably shifted is that of Ni (up to 2.1 eV), whereas the onset of the AI L₂,₃ edge is shifted in all the alloys (up to 1.1 eV). The shifts are interpreted in accordance with X-ray fluorescence and nuclear resonance measurements as changes of the density of states in the valence band of the alloys.
Y1 - 1976
SN - 0031-8957
U6 - https://doi.org/10.1002/pssb.2220740211
N1 - weitere ISSN 0370-1972
VL - 74
IS - 2
SP - 507
EP - 521
PB - Wiley-VCH
CY - Berlin
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - Loss mechanisms and domain stabilization in doped BaTiO₃
JF - Journal of Physics C: Solid State Physics
Y1 - 1978
SN - 0022-3719
U6 - https://doi.org/10.1088/0022-3719/11/15/031
VL - 11
IS - 15
SP - 3333
EP - 3344
PB - n.a.
CY - London
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - Electrical properties of acceptor-doped BaTiO3 ceramic. Hagemann, H. J.
JF - Berichte der Deutschen Keramischen Gesellschaft. 55 (1978)
Y1 - 1978
SN - 0365-9542
SP - 353
EP - 355
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Mayr, W.
A1 - Opitz, J. F. A.
T1 - Folientechnologie für zukünftige keramische Vielschichtkondensatoren. Geittner, P.; Hagemann, H.-J.;Mayr, W. ; Opitz, J.F.A. ; Schmidl, B.; Warnier, J.
JF - Ceramic forum international : cfi ; Berichte der Deutschen Keramischen Gesellschaft. 8 (1993), H. 5
Y1 - 1993
SN - 0173-9913
N1 - weitere ISSN 0196-6219
SP - 5
EP - 15
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - Reduction of hysteresis losses of ferroelectric BaTiO3. Hagemann, H. J.
JF - Ferroelectrics. 22 (1978)
Y1 - 1978
SN - 0015-0193
SP - 743
EP - 743
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Ihrig, H.
T1 - Valence change and phase stability of 3d-doped BaTiO3 annealed in oxygen and hydrogen. Hagemann, H. J.; Ihrig, H.
JF - Physical Review B.. 20 (1979), H. 9
Y1 - 1979
SN - 1095-3795
SP - 3871
EP - 3878
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Ihrig, H.
T1 - BaTiO3 dotiert mit 3d-Ionen: Valenzen, Leerstellen und ihre Auswirkungen. Hagemann, H. J.; Ihrig, H.
JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 3 (1980)
Y1 - 1980
SP - 249
EP - 252
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Lydtin, H.
A1 - Warnier, J.
T1 - Hybrid technology for large SM-fiber preforms. Geittner, P.; Hagemann, H. J.; Lydtin, H.; Warnier, J.
JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 6 (1988), H. 10
Y1 - 1988
SN - 0733-8724
SP - 1451
EP - 1454
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Ungelenk, J.
A1 - Wiechert, D. U.
T1 - Optical time domain reflectometry (OTDR) of diameter modulations in single-mode fibers. Hagemann, H. J.; Ungelenk, J.; Wiechert, D. U.
JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 8 (1990), H. 11
Y1 - 1990
SN - 0733-8724
SP - 1641
EP - 1645
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Lade, H.
A1 - Warnier, J.
A1 - Wiechert, D. U.
T1 - The performance of Depressed-Cladding Single-Mode Fibres with Different b/a Ratios. Hagemann, H.-J.; Lade, H.; Warnier, J.; Wiechert, D. U.
JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 9 (1991), H. 6
Y1 - 1991
SN - 0733-8724
SP - 689
EP - 694
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Wiechert, D. U.
T1 - Measurements and calculations of the LP01 intensity of SM fibres far off the core. Hagemann, H.-J.; Wiechert, D. U.
JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 10 (1992), H. 4
Y1 - 1992
SN - 0733-8724
SP - 407
EP - 412
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
T1 - PCVD hybrid technology for single mode fibres. Hagemann, H. J.; Geittner, P.
JF - Proceedings : papers presented at: the 8th Annual European Fibre Optic Communications and Local Area Networks Exposition
Y1 - 1990
N1 - EFOC LAN <8, 1990, München>
SP - 67
EP - 72
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - O´Bryan, H. M.
T1 - Grain boundary and surface segragation of Ba-Ti-O-Phases in rutile. O´Bryan, H. M.; Hagemann, H. J.
JF - Journal of the American Ceramic Society. 70 (1987)
Y1 - 1987
SN - 0002-7820
SP - 274
EP - 278
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Bachmann, P. K.
A1 - Lade, H.
A1 - Leers, D.
T1 - Influence of the gas phase on diamond deposition and diamond properties. Bachmann, P. K.; Hagemann, H.J.; Lade, H.; Leers, D.; Picht, F.; Wiechert, D. U.
JF - Advanced materials '94 : proceedings of the NIRIM International Symposium on Advanced Materials '94, Tsukuba, Japan, March 13 - 17, 1994 / National Institute for Research in Inorganic Materials. Ed. by M. Kamo
Y1 - 1994
N1 - NIRIM International Symposium on Advanced Materials ; <1994, Tsukuba>
SP - 115
EP - 120
PB - International Communications Specialists, Inc.
CY - Tokyo
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Schnittker, W.
A1 - Warnier, J.
T1 - Abscheidegeschwindigkeiten und Prozeßausbeuten im PCVD-Verfahren. Geittner, P.; Hagemann, H. J.; Schnittker, W.; Warnier, J.; Weling, F.; Wilson, H.
JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 4 (1989)
Y1 - 1989
SP - 140
EP - 143
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
T1 - Störstellengleichgewichte in eisendotierten Titanaten. Hagemann, H. J.
JF - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 4 (1989)
Y1 - 1989
SP - 170
EP - 172
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Hero, A.
A1 - Gonser, U.
T1 - The valence change of Fe in BaTiO3 studied by Mößbauer effect and gravimetry. Hagemann, H. J.; Hero, A.; Gonser, U.
JF - Physica Status Solidi (A) - Applied Research. 61 (1980)
Y1 - 1980
SN - 0031-8965
SP - 63
EP - 72
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Hennings, D.
T1 - Reversible Weight change of acceptor-doped BaTiO3. Hagemann, H. J.; Hennings, D.
JF - Journal of the American Ceramic Society. 64 (1981)
Y1 - 1981
SN - 0002-7820
SP - 590
EP - 594
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Hennings, D.
A1 - Wernicke, R.
T1 - Ceramic multilayer capacitors. Hagemann, H. J.; Hennings, D.; Wernicke, R.
JF - Philips' technical review / Philips' Gloeilampenfabrieken. Philips' Gloeilampenfabrieken . 41 (1984)
Y1 - 1984
SN - 0031-7926
SP - 89
EP - 98
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Hennings, D.
A1 - Wernicke, R.
T1 - Keramische Vielschichtkondensatoren. Hagemann, H. J.; Hennings, D.; Wernicke, R.
JF - Sprechsaal : internat. ceramics & glass magazine. 117 (1984)
Y1 - 1984
SN - 0341-0439
N1 - weitere ISSN 0341-0676
SP - 924
EP - 931
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Stumpe, R.
A1 - Wagner, D.
A1 - Bäuerle, D.
T1 - The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; Bäuerle, D.; Hagemann, H. J.
JF - Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985)
Y1 - 1985
SN - 0731-5171
SP - 143
EP - 147
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Warnier, J.
A1 - Weling, F.
T1 - Reduction of geometric taper losses in the PCVD process. Geittner, P.; Hagemann, H. J.; Warnier, J.; Weling, F.; Wilson, H.
JF - Electronics letters : an intern. publication / The Institution of Electrical Engineers. 21 (1985), H. 13
Y1 - 1985
SN - 0013-5194
SP - 870
EP - 871
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Leers, D.
T1 - Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD. Geittner, P.; Hagemann, H. J. ; Leers, D.
JF - Electronics letters : an intern. publication / The Institution of Electrical Engineers. 25 (1989), H. 7
Y1 - 1989
SN - 0013-5194
SP - 436
EP - 437
ER -
TY - JOUR
A1 - Hagemann, Hans-Jürgen
A1 - Geittner, P.
A1 - Warnier, J.
A1 - Wilson, H.
T1 - PCVD at high deposition rates. Geittner, P.; Hagemann, H. J.; Warnier, J.; Wilson, H.
JF - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 4 (1986), H. 7
Y1 - 1986
SN - 0733-8724
SP - 818
EP - 822
ER -