TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
JF  - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]
Y1  - 1996
SN  - 0-7803-3095-1
N1  - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881
SP  - 67
EP  - ff.
CY  - Piscataway, NJ [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Lüth, H.
T1  - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ...
JF  - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1
Y1  - 1996
SN  - 0-7803-3180-X
N1  - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898
SP  - 579
EP  - ff.
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
JF  - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3
Y1  - 1996
SN  - 981-02-2947-X
N1  - International Conference on the Physics of Semiconductors <23, 1996, Berlin>
SP  - 2251
EP  - ff.
PB  - World Scientific
CY  - Singapore [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
JF  - Europhysics letters. 36 (1996), H. 1
Y1  - 1996
SN  - 1286-4854
SP  - 61
EP  - 66
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Lüth, H.
T1  - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ...
JF  - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2
Y1  - 1996
SN  - 0018-9499
SP  - 1446
EP  - 1451
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schönhut, J.
A1  - Metzner, C.
T1  - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 701
EP  - 705
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.
A1  - Lange, J.
T1  - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11
Y1  - 1996
SN  - 1095-3795
SP  - 7392
EP  - 7402
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Appenzeller, J.
A1  - Schroer, C.
T1  - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15
Y1  - 1996
SN  - 1095-3795
SP  - 9959
EP  - 9963
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novák, J.
A1  - Morvic, M.
T1  - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ;  J. Betko ; A. Förster ...
JF  - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1
Y1  - 1996
SN  - 0921-5107
SP  - 58
EP  - 62
ER  -