TY - JOUR A1 - Stock, J. A1 - Malindretos, J. A1 - Indlekofer, K.M. A1 - Pöttgens, Michael A1 - Förster, Arnold A1 - Lüth, Hans T1 - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits JF - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6 Y1 - 2001 SN - 0018-9383 SP - 1028 EP - 1032 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER - TY - JOUR A1 - Förster, Arnold A1 - Stock, J. A1 - Indlekofer, K. M. T1 - Perspectives of resonant tunneling diodes JF - Recent research developments in materials science & engineering/ 1,2 Y1 - 2002 SN - 81-7895-057-X N1 - Nebent.: Materials science & engineering SP - 527 EP - 556 PB - Transworld Research Network CY - Trivandrum, India ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Schafer, F. A1 - Kordos, P. T1 - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 87 EP - 90 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Adam, R. A1 - Mikulics, M. A1 - Schelten, J. T1 - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R. JF - Applied Physics Letters. 81 (2002), H. 18 Y1 - 2002 SN - 1077-3118 SP - 3485 EP - 3487 ER -