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A1  - Evers, Jörg
T1  - Four-wave mixing enhanced white-light cavity
JF  - Physical Review A - Atomic, molecular, and optical physics
Y1  - 2008
SN  - 0556-2791
VL  - 78
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SP  - 051802(R)
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A1  - Kern, Alexander
T1  - Future evolution of risk management for structures : Advancement for the future IEC 62305-2 Ed3
Y1  - 2011
N1  - XI International Symposium on Lightning Protection (SIPDA), Fortaleza (Brasilien), 2011.
SP  - 1
EP  - 6
PB  - IEEE
CY  - New York
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A1  - Förster, Arnold
A1  - Kohleick, R.
A1  - Lüth, H.
T1  - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure  / R. Kohleick ; A. Förster ; H. Lüth
JF  - Physical Review B . 48 (1993), H. 20
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N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
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A1  - Hoyler, Friedrich
A1  - Hamada, S. A.
A1  - Hamilton, W. D.
T1  - Gamma-gamma directional correlation measurements in 84Kr following thermal neutron capture by natural krypton / S. A. Hamada ; W. D. Hamilton ; F. Hoyler
JF  - Journal of physics / G. 13 (1987), H. 9
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T1  - Gemeinsam sind wir stark . Schaffner, M.; Thielemann, F.
JF  - Print & Produktion. 9 (1996), H. 10
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A1  - Siebe, F.
A1  - Fox, A.
T1  - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 129
EP  - 132
PB  - IEEE Operations Center
CY  - Piscataway, NJ
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TY  - JOUR
A1  - Mikulics, M.
A1  - Camara, I.
A1  - Hardt, A. van der
A1  - Fox, A.
A1  - Förster, Arnold
A1  - Gusten, R.
A1  - Lüth, H.
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T1  - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs
JF  - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald
Y1  - 2004
SN  - 0-7803-8335-7
N1  - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867
SP  - 231
EP  - 234
PB  - IEEE Operations Center
CY  - Piscataway, NJ
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A1  - Kuperjans, Isabel
A1  - Esser, J.
A1  - Meyer, Jörg
A1  - Donner, O.
T1  - Gestaltung und Bewertung von Energieanlagen unter ökologischen, wirtschaftlichen und technischen Gesichtspunkten
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A1  - Fleischhaker, Robert
A1  - Sahrai, Mostafa
A1  - Evers, Jörg
T1  - Group velocity control in the ultraviolet domain via interacting dark-state resonances
JF  - Journal of physics B: Atomic, molecular and optical physics
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U6  - https://doi.org/10.1088/0953-4075/41/2/025504
SN  - 0953-4075
SN  - 1361-6455
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IS  - 2
SP  - 25504
EP  - 25600
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A1  - Lentzen, M.
A1  - Gerthsen, D.
T1  - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
JF  - Applied physics letters. 60 (1992), H. 1
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N1  - ISSN der E-Ausg.: 1077-3118
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EP  - 76
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