TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - Verghese, S.
T1  - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
JF  - Applied Physics Letters. 74 (1999), H. 7
Y1  - 1999
SN  - 1077-3118
SP  - 1039
EP  - 1041
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Indlekofer, K.-M.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Glavin, B. A.
A1  - Konakova, R. V.
T1  - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
JF  - Physical  Review . B. 61 (2000), H. 16
Y1  - 2000
SN  - 1550-235X
SP  - 10898
EP  - 10904
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kiesslich, G.
A1  - Wacker, A.
A1  - Scholl, E.
T1  - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
JF  - Physical Review B. 68 (2003)
Y1  - 2003
SN  - 1550-235X
N1  - 125331 (6 Seiten)
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Mikulics, V. V.
A1  - Adam, R.
T1  - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R.
JF  - Acta physica Polonica / A. 107 (2005), H. 1
Y1  - 2005
SN  - 0587-4246
SP  - 109
EP  - 117
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Wensorra, J.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
JF  - Nano Letters. 5 (2005)
Y1  - 2005
SN  - 0587-4246
SP  - 2470
EP  - 2475
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Morvic, M.
A1  - Betko, J.
A1  - Novak, J.
T1  - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements.  Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
JF  - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg
Y1  - 1999
SN  - 3-932392-19-1
N1  - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen>
SP  - 79
EP  - 85
PB  - Lehrstuhl für Mikrocharakterisierung
CY  - Erlangen
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  -