TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Indlekofer, K.-M. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Glavin, B. A. A1 - Konakova, R. V. T1 - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes JF - Physical Review . B. 61 (2000), H. 16 Y1 - 2000 SN - 1550-235X SP - 10898 EP - 10904 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. A1 - Konakova, R. V. A1 - Sheka, D. I. T1 - Resonant spectroscopy of electric-field-induced superlattices JF - Journal of Applied Physics. 90 (2001), H. 6 Y1 - 2001 SN - 1089-7550 U6 - http://dx.doi.org/10.1063/1.1392956 SP - 2857 EP - 2861 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Spectral Responsivity of single-quantum-well photodetectors JF - Applied Physics Letters. 77 (2000), H. 1 Y1 - 2000 SN - 1077-3118 SP - 16 EP - 18 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Zatko, B. A1 - Dubecký, F. A1 - Bohacek, P. A1 - Gombia, E. A1 - Frigeri, P. A1 - Mosca, R. A1 - Franchi, S. A1 - Huarn, J. A1 - Nescas, V. A1 - Sekacova, M. A1 - Förster, Arnold A1 - Kordos, P. T1 - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs JF - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2 Y1 - 2004 SN - 0168-9002 SP - 111 EP - 120 ER -