TY - JOUR A1 - Behbahani, Mehdi A1 - Probst, M. A1 - Mai, A. A1 - Tran, L. A1 - Vonderstein, K. A1 - Keschenau, P. A1 - Linde, T. A1 - Steinseifer, U. A1 - Behr, M. A1 - Mottaghy, K. T1 - The influence of high shear on thrombosis and hemolysis in artificial organs JF - Artificial Organs Y1 - 2010 SN - 0391-3988 N1 - Special Issue: SI ; Meeting abstract VL - 33 IS - 7 SP - 426 EP - 426 ER - TY - JOUR A1 - Kotter, Michael A1 - Riekert, L. T1 - The influence of impregnation, drying and activation on the activity and distribution of CuO on α-Alumina JF - Preparation of Catalysts II : scientific bases for the preparation of heterogeneous catalysts ; Proceedings of the Second International Symposium, Louvain-la-Neuve, September 4-7, 1978 / Eds.: B. Delmon ... - (Studies in surface science and catalysis ; 3) Y1 - 1979 SN - 0-444-41733-8 N1 - International Symposium on the Scientific Bases for the Preparation of Heterogeneous Catalysts <2, 1978, Louvain-la-Neuve> SP - 51 EP - 63 PB - Elsevier CY - Amsterdam [u.a.] ER - TY - JOUR A1 - Baumann, Marcus A1 - Brandini, Frederico A1 - Staubes, Regina T1 - The influence of light and temperature on carbonspecific DMS release by cultures of Phaeocystis antarctica and three antarctic diatoms / Baumann, Marcus E.M. ; Brandini, Frederico ; Staubes, Regina JF - Marine Chemistry. 45 (1994), H. 1-2 Y1 - 1994 SN - 0304-4203 SP - 129 EP - 136 ER - TY - CHAP A1 - Becker, Jörg A1 - Eggert, Mathias A1 - Saat, Jan A1 - Dirding, Philipp T1 - The Influence of Regulation on Data Warehouse Engineering – Investigating an IT Consulting Case in the Financial Service Industry T2 - Proceedings of the Nineteenth Americas Conference on Information Systems, Chicago, Illinois, August 15-17, 2013. Y1 - 2013 SP - 1 EP - 8 ER - TY - JOUR A1 - Klein, Michel A1 - Butenweg, Christoph A1 - Klinkel, Sven T1 - The Influence of Soil-Structure-Interaction on the Fatigue Analysis in the Foundation Design of Onshore Wind Turbines JF - Procedia Engineering Y1 - 2017 U6 - https://doi.org/10.1016/j.proeng.2017.09.325 SN - 1877-7058 VL - 199 SP - 3218 EP - 3223 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Herrmann, Ulf A1 - Lippke, F. T1 - The influence of transients on the design of DSG solar fields JF - Journal de Physique IV : proceedings Y1 - 1999 SN - 2-86883-402-7 U6 - https://doi.org/10.1051/jp4:1999377 SN - 1764-7177 (Online) SN - 1155-4339 (Print) VL - 9 IS - PR3 SP - 489 EP - 494 ER - TY - CHAP A1 - Bragard, Michael A1 - Conrad, M. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off T2 - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies] Y1 - 2010 SN - 978-1-4244-5286-6 (Print) SN - 978-1-4244-5287-3 (Online) U6 - https://doi.org/10.1109/ECCE.2010.5618410 SP - 4551 EP - 4557 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - Conrad, M. A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off JF - IEEE transactions on industry applications Y1 - 2011 U6 - https://doi.org/10.1109/TIA.2011.2161432 SN - 0093-9994 VL - 47 IS - 5 SP - 2175 EP - 2182 PB - IEEE CY - New York ER - TY - THES A1 - Bragard, Michael T1 - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62) N2 - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified. Y1 - 2012 SN - 978-3-8440-1152-4 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 2012 PB - Shaker CY - Aachen ER - TY - JOUR A1 - Lauth, Jakob A1 - Solomun, T. A1 - Hirschwald, W. A1 - Christmann, K. T1 - The interaction of carbon monoxide with a ruthenium(1010) surface JF - Surface Science. 210 (1989), H. 1-2 Y1 - 1989 SN - 0039-6028 SP - 201 EP - 224 ER -