TY - JOUR A1 - Gasparyan, F.V. A1 - Vitusevich, S.A. A1 - Offenhäusser, A. A1 - Schöning, Michael Josef T1 - Modified charge fluctuation noise model for electrolyte-insulator-semiconductor devices JF - Modern Physics Letters B (MPLB). 25 (2011), H. 11 Y1 - 2011 SN - 0217-9849 SP - 831 EP - 840 PB - World Scientific Publ. CY - Singapur ER - TY - JOUR A1 - Molinnus, Denise A1 - Iken, Heiko A1 - Johnen, Anna Lynn A1 - Richstein, Benjamin A1 - Hellmich, Lena A1 - Poghossian, Arshak A1 - Knoch, Joachim A1 - Schöning, Michael Josef T1 - Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta₂O₅ Films Prepared by Atomic Layer Deposition JF - physica status solidi (a) applications and materials science N2 - Miniaturized electrolyte–insulator–semiconductor capacitors (EISCAPs) with ultrathin gate insulators have been studied in terms of their pH-sensitive sensor characteristics: three different EISCAP systems consisting of Al–p-Si–Ta2O5(5 nm), Al–p-Si–Si3N4(1 or 2 nm)–Ta2O5 (5 nm), and Al–p-Si–SiO2(3.6 nm)–Ta2O5(5 nm) layer structures are characterized in buffer solution with different pH values by means of capacitance–voltage and constant capacitance method. The SiO2 and Si3N4 gate insulators are deposited by rapid thermal oxidation and rapid thermal nitridation, respectively, whereas the Ta2O5 film is prepared by atomic layer deposition. All EISCAP systems have a clear pH response, favoring the stacked gate insulators SiO2–Ta2O5 when considering the overall sensor characteristics, while the Si3N4(1 nm)–Ta2O5 stack delivers the largest accumulation capacitance (due to the lower equivalent oxide thickness) and a higher steepness in the slope of the capacitance–voltage curve among the studied stacked gate insulator systems. KW - atomic layer deposition KW - capacitive field-effect sensors KW - pH sensors KW - ultrathin gate insulators Y1 - 2022 U6 - http://dx.doi.org/10.1002/pssa.202100660 SN - 1862-6319 VL - 219 IS - 8 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Schöning, Michael Josef A1 - Näther, Niko A1 - Auger, V. A1 - Poghossian, Arshak A1 - Koudelka-Hep, M. T1 - Miniaturized flow-through cell with integrated capacitive EIS sensors fabricated at wafer level using Si and Su-8 technologies JF - Technical digest of the 10th International Meeting on Chemical Sensors, July 11 - 14, 2004, Tsukuba, Japan / Japan Association of Chemical Sensors Y1 - 2004 N1 - Chemical sensors ; 20.2004 Suppl. B. IMCS ; (10, 2004, Tsukuba) ; International Meeting on Chemical Sensors ; (10 : ; 2004.07.11-14 : ; Tsukuba) SP - 554 EP - 555 PB - Japan Association of Chemical Sensors CY - Fukuoka ER - TY - JOUR A1 - Miyamoto, Ko-ichiro A1 - Kaneko, Kazumi A1 - Matsuo, Akira A1 - Wagner, Torsten A1 - Kanoh, Shin`ichiro A1 - Schöning, Michael Josef A1 - Yoshinobu, Tatsuo T1 - Miniaturized chemical imaging sensor system using an OLED display panel JF - Procedia Engineering. 5 (2010) Y1 - 2010 SN - 1877-7058 N1 - Eurosensor XXIV Conference SP - 516 EP - 519 ER - TY - JOUR A1 - Miyamoto, Ko-ichiro A1 - Kaneko, Kazumi A1 - Matsuo, Akira A1 - Wagner, Torsten A1 - Kanoh, Shiníchiro A1 - Schöning, Michael Josef A1 - Yoshinobu, Tatsuo T1 - Miniaturized chemical imaging sensor system using an OLED display panel JF - Sensors and Actuators B: Chemical N2 - The chemical imaging sensor is a semiconductor-based chemical sensor that can visualize the two-dimensional distribution of specific ions or molecules in the solution. In this study, we developed a miniaturized chemical imaging sensor system with an OLED display panel as a light source that scans the sensor plate. In the proposed configuration, the display panel is placed directly below the sensor plate and illuminates the back surface. The measured area defined by illumination can be arbitrarily customized to fit the size and the shape of the sample to be measured. The waveform of the generated photocurrent, the current–voltage characteristics and the pH sensitivity were investigated and pH imaging with this miniaturized system was demonstrated. KW - LAPS KW - Light-addressable potentiometric sensor KW - Chemical imaging sensor KW - Organic light-emitting diode display Y1 - 2012 U6 - http://dx.doi.org/10.1016/j.snb.2011.02.029 SN - 0925-4005 N1 - Part of special issue "Eurosensors XXIV, 2010" VL - 170 SP - 82 EP - 87 PB - Elsevier CY - Amsterdam ER - TY - CHAP A1 - Yoshinobu, Tatsuo A1 - Miyamoto, Ko-Ichiro A1 - Wagner, Torsten A1 - Schöning, Michael Josef ED - Yamaguchi, Takami T1 - Miniaturized and high-speed chemical imaging systems T2 - Nano-Biomedical Engineering 2012. Proceedings of the Tohoku University Global Centre of Excellence Programme, Sakura Hall, Tohoku University, Sendai Japan, 5 – 6 March 2012 Y1 - 2012 U6 - http://dx.doi.org/10.1142/9781848169067_0045 SP - 386 EP - 395 PB - World Scientific CY - Singapur ER - TY - JOUR A1 - Simonis, A. A1 - Lüth, H. A1 - Wang, J. A1 - Schöning, Michael Josef T1 - Miniaturisierte Referenzelektroden in Siliziumtechnologie für elektrochemische Sensoranwendungen JF - Sensoren und Messsysteme 2004 : Tagung Ludwigsburg, 15. und 16. März 2004 / VDI-VDE-Gesellschaft Mess- und Automatisierungstechnik Y1 - 2004 SN - 3-18-091829-2 N1 - Auch erschienen als: VDI-Berichte ; 1829 SP - 847 EP - 850 PB - VDI CY - Düsseldorf ER - TY - JOUR A1 - Simonis, A. A1 - Dawgul, M. A1 - Lüth, H. A1 - Schöning, Michael Josef T1 - Miniaturised reference electrodes for field-effect sensors compatible to silicon chip technology JF - Electrochimica Acta. 51 (2005), H. 5 Y1 - 2005 SN - 0013-4686 U6 - http://dx.doi.org/10.1016/j.electacta.2005.04.063 SP - 930 EP - 937 ER - TY - JOUR A1 - Schöning, Michael Josef A1 - Näther, Niko A1 - Auger, V. A1 - Poghossian, Arshak A1 - Koudelka-Hep, M. T1 - Miniaturised flow-through cell with integrated capacitive EIS sensor fabricated at wafer level using Si and SU-8 technologies JF - Sensors and Actuators B. 108 (2005), H. 1-2 Y1 - 2005 SN - 0925-4005 N1 - Proceedings of the Tenth International Meeting on Chemical Sensors — IMCS - 10 2004 SP - 986 EP - 992 ER - TY - CHAP A1 - Platen, Johannes A1 - Poghossian, Arshak A1 - Schöning, Michael Josef T1 - Microstructured Nanostructures – nanostructuring by means of conventional photolithography and layer-expansion technique N2 - A new and simple method for nanostructuring using conventional photolithography and layer expansion or pattern-size reduction technique is presented, which can further be applied for the fabrication of different nanostructures and nano-devices. The method is based on the conversion of a photolithographically patterned metal layer to a metal-oxide mask with improved pattern-size resolution using thermal oxidation. With this technique, the pattern size can be scaled down to several nanometer dimensions. The proposed method is experimentally demonstrated by preparing nanostructures with different configurations and layouts, like circles, rectangles, trapezoids, “fluidic-channel”-, “cantilever”- and meander-type structures. KW - Biosensor KW - Nanostructuring KW - layer expansion KW - pattern-size reduction KW - self-aligned patterning Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:hbz:a96-opus-1477 ER -