TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.;  Gerthsen D.;  Förster A.
JF  - Ultramicroscopy. 72 (1998), H. 3-4
Y1  - 1998
SN  - 0304-3991
SP  - 121
EP  - 133
ER  - 
TY  - JOUR
A1  - Pietsch, Wolfram
T1  - Customer-Oriented Specification and Evaluation of IT Service Level Agreements
JF  - Software process improvement : Elektronische Ressource : 12th European conference ; proceedings / EuroSPI 2005, Budapest, Hungary, November 9 - 11, 2005. Ita Richardson ... (ed.)
Y1  - 2005
SN  - 3-540-30286-7
N1  - Lecture notes in computer science ; 3792 ; EuroSPI <12, 2005, Budapest>
SP  - 83
EP  - 94
PB  - Springer
CY  - Berlin [u.a.]
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Journal of  Physics D: Applied  Physics. 32 (1999), H. 14
Y1  - 1999
SN  - 1361-6463
SP  - 1729
EP  - 1733
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Gersdorf, P.
A1  - Fox, A.
T1  - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-&#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
JF  - IEEE Photonics Technology Letters. 11 (1999), H. 1
Y1  - 1999
SN  - 1041-1135
SP  - 117
EP  - 119
ER  - 
TY  - JOUR
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Litvinov, D.
A1  - Gerthsen, D.
A1  - Förster, Arnold
A1  - Schmidt, R.
T1  - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF  - Physical Review B. 61 (2000), H. 12
Y1  - 2000
SN  - 1095-3795
SP  - 8276
EP  - 8288
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, B. A.
T1  - Intrinsic bistability effect in delta doped tunneling diodes /  S. A. Vitusevich ; A. Förster ; B. A.  Belyaev ...
JF  - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz
Y1  - 1999
N1  - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5
CY  - Warsaw
ER  -