TY - PAT A1 - Nötzold, K. A1 - Bragard, Michael A1 - Fink, K. A1 - Griessel, R. A1 - Wegener, R. T1 - Cascaded H-bridge converter with transformer based cell power balancing in each voltage level : [Patentschrift] Y1 - 2014 N1 - Titel des US-Patents: Bypassed cascaded cell converter : [patent of invention]. - Außerdem veröffentlicht als CN103997231 (A) PB - Europäisches Patentamt / United States Patent and Trademark Office [u.a.] CY - Den Haag / Alexandria, VA ER - TY - CHAP A1 - Bragard, Michael A1 - Ronge, C. A1 - De Doncker, R. W. T1 - Sandwich design of high-power thyristor based devices with integrated MOSFET structure T2 - Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom Y1 - 2011 SN - 978-1-61284-167-0 (Print) SN - 978-90-75815-15-3 (Online) PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bragard, Michael A1 - Gottschlich, J. A1 - De Doncker, R. W. T1 - Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure T2 - 2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...] Y1 - 2011 SN - 978-1-61284-958-4 (Print) SN - 978-1-61284-956-0 (Online) U6 - http://dx.doi.org/10.1109/ICPE.2011.5944661 SP - 1182 EP - 1189 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance JF - IEEE transactions on power electronics N2 - This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided. Y1 - 2012 U6 - http://dx.doi.org/10.1109/TPEL.2012.2189136 SN - 0885-8993 VL - 27 IS - 9 SP - 4163 EP - 4171 PB - IEEE CY - New York ER - TY - CHAP A1 - Magnor, D. A1 - Soltau, N. A1 - Bragard, Michael A1 - Schmiegel, A. A1 - De Doncker, R. W. A1 - Sauer, D. U. ED - de Santi, Giovanni Frederigo T1 - Analysis of the model dynamics for the battery and battery converter in a grid-connected 5 kW photovoltaic system T2 - Proceedings / 25th European Photovoltaic Solar Energy Conference and Exhibition ; 5th World Conference on Photovoltaic Energy Conversion ; Feria Valencia, Convention & Exhibition Centre, Valencia, Spain, conference 6 - 10 September 2010, exhibition 6 - 9 September 2010 ; Joint World Conference of: 25th European Photovoltic Solar Energy Conference and Exhibition, 36th US IEEE Photovoltaic Specialists Conference, 20th Asia/Pacific PV Science and Engineering Conference Y1 - 2010 SN - 3-936338-26-4 (DVD-ROM) N1 - EU PVSEC WCPEC PB - WIP Renewable Energies CY - [München] ER - TY - THES A1 - Bragard, Michael T1 - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62) N2 - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified. Y1 - 2012 SN - 978-3-8440-1152-4 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 2012 PB - Shaker CY - Aachen ER - TY - CHAP A1 - Nötzold, K. A1 - Uphues, A. A1 - Wegener, R. A1 - Fink, K. A1 - Bragard, Michael A1 - Griessel, R. A1 - Soter, S. T1 - Inverter based test setup for LVRT verification of a full-scale 2 MW wind power converter T2 - 15th European Conference on Power Electronics and Applications (EPE), 2013 : 2 - 6 Sept. 2013, Lille, France / [EPE Association; PELS, IEEE Power Electronics Society] Y1 - 2013 SN - 978-1-4799-0115-9 (Online-Ausg.) U6 - http://dx.doi.org/10.1109/EPE.2013.6634752 SP - 1037 EP - 1042 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nötzold, K. A1 - Uphues, A. A1 - Wegener, R. A1 - Soter, S. A1 - Fink, K. A1 - Bragard, Michael A1 - Griessel, R. T1 - Inverter based test setup for LVRT verification of a full-scale 2 MW wind power converter T2 - EPE Joint Wind Energy and T&D Chapters Seminar : 28th and 29th of June 2012, in the Utzon Centre, Aalborg, Denmark ; papers, posters, presentations. - Session 2: Grid connection, compliance Y1 - 2012 PB - EPE Association CY - Brussels ER - TY - CHAP A1 - Köllensperger, P. A1 - Bragard, Michael A1 - Plum, T. A1 - De Doncker, R. W. T1 - The dual GCT : a new high-power device using optimized GCT technology T2 - Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA Y1 - 2007 SN - 978-1-4244-1260-0 (Online) SN - 978-1-4244-1259-4 (Print) U6 - http://dx.doi.org/10.1109/07IAS.2007.76 SP - 358 EP - 365 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Köllensperger, P. A1 - Bragard, Michael A1 - Plum, T. A1 - De Doncker, R. W. T1 - The dual GCT : new high-power device using optimized GCT technology JF - IEEE transactions on industry applications Y1 - 2009 U6 - http://dx.doi.org/10.1109/TIA.2009.2027364 SN - 0093-9994 VL - 45 IS - 5 SP - 1754 EP - 1762 ER -