TY  - JOUR
A1  - Förster, Arnold
A1  - Hartmann, A.
A1  - Dieker, Ch.
A1  - Hollfelder, M.
T1  - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H.
JF  - Applied Surface Science. 123-124 (1998)
Y1  - 1998
SN  - 0169-4332
N1  - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces
SP  - 704
EP  - 709
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hauke, M.
A1  - Jakumeit, J.
A1  - Krafft, B.
T1  - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 4
Y1  - 1998
SN  - 1089-7550
SP  - 2034
EP  - 2039
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hu, Quing
A1  - Verghese, S.
T1  - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster
JF  - Semiconductor science and technology. 11 (1996), H. 12
Y1  - 1996
SN  - 1361-6641
SP  - 1888
EP  - 1894
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.
A1  - Lange, J.
T1  - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11
Y1  - 1996
SN  - 1095-3795
SP  - 7392
EP  - 7402
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Physica B: Condensed Matter. 314 (2002), H. 1-4
Y1  - 2002
SN  - 0921-4526
SP  - 499
EP  - 502
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Janssen, G.
A1  - Roer, T. G. van de
T1  - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster
JF  - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]
Y1  - 1999
N1  - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen
SP  - 219
PB  - Technology Foundation, STW
CY  - Utrecht
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kicin, S
A1  - Cambel, V.
A1  - Kuliffayova, M.
T1  - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.
JF  - Journal of Applied Physics. 91 (2002), H. 2
Y1  - 2002
SN  - 1089-7550
SP  - 878
EP  - 880
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kiesslich, G.
A1  - Wacker, A.
A1  - Scholl, E.
T1  - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
JF  - Physical Review B. 68 (2003)
Y1  - 2003
SN  - 1550-235X
N1  - 125331 (6 Seiten)
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Klemradt, U.
A1  - Funke, M.
A1  - Fromm, M
T1  - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster
JF  - Physica B: condensed matter. 221 (1996), H. 1-4
Y1  - 1996
SN  - 0921-4526
SP  - 27
EP  - 33
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kohleick, R.
A1  - Lüth, H.
T1  - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure  / R. Kohleick ; A. Förster ; H. Lüth
JF  - Physical Review B . 48 (1993), H. 20
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15138
EP  - 15143
ER  -