TY - CHAP A1 - Bindzus, Manuel A1 - Bragard, Michael T1 - Motivating Intuitive Understanding of the Switched Reluctance Machine in the Education of Undergraduate Students T2 - 2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Y1 - 2018 SN - 978-1-5386-6903-7 U6 - http://dx.doi.org/10.1109/RTUCON.2018.8659870 SP - 1 EP - 6 ER - TY - JOUR A1 - Bragard, G. A1 - Bragard, Michael T1 - Ein kostengünstiges, universelles Modellbauinterface JF - Der mathematische und naturwissenschaftliche Unterricht : MNU ; Organ des Deutschen Vereins zur Förderung des Mathematischen und Naturwissenschaftlichen Unterrichts e.V. N2 - Wir stellen einen USB-Baustein vor, der eine kostengünstige und universelle Möglichkeit schafft , im Unterricht den Themenkreis Messen-Steuern-Regeln zu behandeln. Die Funktionalität orientiert sich am CVK-Interface der Firma Fischertechnik. Im Gegensatz zu kommerziellen Lösungen erlaubt unser Aufbau auch den preiswerten Einsatz in Gruppen- oder Einzelarbeit. Abschließend berichten wir über ein Beispiel aus dem Unterrichtseinsatz. Y1 - 2012 SN - 0025-5866 VL - 65 IS - 5 SP - 290 EP - 293 PB - Seeberger CY - Neuss ER - TY - THES A1 - Bragard, Michael T1 - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62) N2 - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified. Y1 - 2012 SN - 978-3-8440-1152-4 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 2012 PB - Shaker CY - Aachen ER - TY - JOUR A1 - Bragard, Michael A1 - Bragard, G. T1 - Erweiterungen für das CBL2-Messinterface von Texas-Instruments JF - Der mathematische und naturwissenschaftliche Unterricht : MNU ; Organ des Deutschen Vereins zur Förderung des Mathematischen und Naturwissenschaftlichen Unterrichts e.V. N2 - Das von Texas-Instruments (TI) vertriebene Interface CBL2 wird über einige TI-Grafik-Rechner (TI-92, TI-89 usw.) angesteuert. Wegen seiner Handlichkeit wird dieses System beim Unterricht in wechselnden Räumen »großen« Messwerterfassungssystemen oft vorgezogen. Das CBL2 bietet drei analoge Eingänge, die immerhin mit 10 Bit Auflösung und bis zu einer Frequenz von 50 kHz arbeiten. Weiterhin besitzt das CBL2 eine Buchse für angeblich nur einen digitalen Ein- bzw. Ausgang. An diesem Eingang wird standardmäßig hauptsächlich der Bewegungssensor CBR betrieben. In diesem Beitrag werden Erweiterungsmöglichkeiten dieses Anschlusses beschrieben. Y1 - 2003 SN - 0025-5866 N1 - Zugang nur für MNU-Mitglieder! VL - 56 IS - 2 SP - 87 EP - 88 PB - Seeberger CY - Neuss ER - TY - PAT A1 - Bragard, Michael A1 - Budde, W. O. A1 - Hente, D. A1 - Jacobs, J. H. A. M. A1 - Waffenschmidt, E. T1 - Lighting system : [patent of invention] T1 - Beleuchtungssystem : [Patentschrift] Y1 - 2008 N1 - Außerdem veröffentlicht als: TW200817630 (A), TWI402458 (B), RU2009106047 (A), RU2440636 (C2), KR20090042806 (A), KR101423467 (B1), JP2009545103 (A), JP5265540 (B2), CN101490772 (A) und CN101490772 (B) PB - WIPO / United States Patent and Trademark Office CY - Geneva / Alexandria, VA ER - TY - CHAP A1 - Bragard, Michael A1 - Conrad, M. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off T2 - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies] Y1 - 2010 SN - 978-1-4244-5286-6 (Print) SN - 978-1-4244-5287-3 (Online) U6 - http://dx.doi.org/10.1109/ECCE.2010.5618410 SP - 4551 EP - 4557 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - Conrad, M. A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off JF - IEEE transactions on industry applications Y1 - 2011 U6 - http://dx.doi.org/10.1109/TIA.2011.2161432 SN - 0093-9994 VL - 47 IS - 5 SP - 2175 EP - 2182 PB - IEEE CY - New York ER - TY - PAT A1 - Bragard, Michael A1 - De Doncker, R. W. A1 - Mura, F A1 - Dick, C. T1 - Halbleiterbauelement und Verfahren zur Herstellung desselben [Offenlegungsschrift] T1 - Semiconductor element and method producing the same [patent application] Y1 - 2011 PB - Deutsches Patent- und Markenamt / Europäisches Patentamt / WIPO CY - München / Den Hague / Geneva ER - TY - CHAP A1 - Bragard, Michael A1 - Gottschlich, J. A1 - De Doncker, R. W. T1 - Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure T2 - 2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...] Y1 - 2011 SN - 978-1-61284-958-4 (Print) SN - 978-1-61284-956-0 (Online) U6 - http://dx.doi.org/10.1109/ICPE.2011.5944661 SP - 1182 EP - 1189 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bragard, Michael A1 - Hoek, Hauke van A1 - Hoegen, Anne von A1 - Doncker, Rik W. De T1 - Motivation-based Learning: Teaching Fundamentals of Electrical Engineering with an LED Spinning Top T2 - 2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Y1 - 2018 SN - 978-1-5386-6903-7 U6 - http://dx.doi.org/10.1109/RTUCON.2018.8659810 SP - 1 EP - 6 ER -