TY - CHAP A1 - Bragard, Michael A1 - Ronge, C. A1 - De Doncker, R. W. T1 - Sandwich design of high-power thyristor based devices with integrated MOSFET structure T2 - Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom Y1 - 2011 SN - 978-1-61284-167-0 (Print) SN - 978-90-75815-15-3 (Online) PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bragard, Michael A1 - Hoek, Hauke van A1 - Hoegen, Anne von A1 - Doncker, Rik W. De T1 - Motivation-based Learning: Teaching Fundamentals of Electrical Engineering with an LED Spinning Top T2 - 2018 IEEE 59th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Y1 - 2018 SN - 978-1-5386-6903-7 U6 - http://dx.doi.org/10.1109/RTUCON.2018.8659810 SP - 1 EP - 6 ER - TY - CHAP A1 - Bragard, Michael A1 - Gottschlich, J. A1 - De Doncker, R. W. T1 - Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure T2 - 2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...] Y1 - 2011 SN - 978-1-61284-958-4 (Print) SN - 978-1-61284-956-0 (Online) U6 - http://dx.doi.org/10.1109/ICPE.2011.5944661 SP - 1182 EP - 1189 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - Conrad, M. A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off JF - IEEE transactions on industry applications Y1 - 2011 U6 - http://dx.doi.org/10.1109/TIA.2011.2161432 SN - 0093-9994 VL - 47 IS - 5 SP - 2175 EP - 2182 PB - IEEE CY - New York ER - TY - CHAP A1 - Bragard, Michael A1 - Conrad, M. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off T2 - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies] Y1 - 2010 SN - 978-1-4244-5286-6 (Print) SN - 978-1-4244-5287-3 (Online) U6 - http://dx.doi.org/10.1109/ECCE.2010.5618410 SP - 4551 EP - 4557 PB - IEEE CY - Piscataway, NJ ER - TY - PAT A1 - Bragard, Michael A1 - Budde, W. O. A1 - Hente, D. A1 - Jacobs, J. H. A. M. A1 - Waffenschmidt, E. T1 - Lighting system : [patent of invention] T1 - Beleuchtungssystem : [Patentschrift] Y1 - 2008 N1 - Außerdem veröffentlicht als: TW200817630 (A), TWI402458 (B), RU2009106047 (A), RU2440636 (C2), KR20090042806 (A), KR101423467 (B1), JP2009545103 (A), JP5265540 (B2), CN101490772 (A) und CN101490772 (B) PB - WIPO / United States Patent and Trademark Office CY - Geneva / Alexandria, VA ER - TY - THES A1 - Bragard, Michael T1 - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62) N2 - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified. Y1 - 2012 SN - 978-3-8440-1152-4 N1 - Zugl.: Aachen, Techn. Hochsch., Diss., 2012 PB - Shaker CY - Aachen ER - TY - JOUR A1 - Booysen, Tracy A1 - Rieger, Michael A1 - Ferrein, Alexander T1 - Towards inexpensive robots for science & technology teaching and education in Africa Y1 - 2011 SN - 978-1-61284-992-8 N1 - AFRICON, 2011 SP - 1 EP - 6 PB - IEEE CY - New York ER - TY - BOOK A1 - Bochmann, Sandra A1 - Ritz, Thomas T1 - Prototyping tools for mobile applications Y1 - 2013 SN - 978-3-943356-45-8 PB - Steinbeis-Ed. CY - Stuttgart ER - TY - JOUR A1 - Bitz, Andreas A1 - Zhou, Yi A1 - El Quardi, Abdessamad A1 - Streckert, Joachim T1 - Occupational Exposure at Mobile Communication Base Station Antenna Sites JF - Frequenz Y1 - 2009 U6 - http://dx.doi.org/10.1515/FREQ.2009.63.7-8.123 SN - 2191-6349 VL - 63 IS - 7-8 SP - 123 EP - 128 ER -